Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi2FeMnO6 films
Ferroelectric perovskite oxide materials for photovoltaics (PV) have received considerable attention for their switchable PV responses and above-bandgap photovoltages as a type of new-generation PV device. Relatively large bandgap and low photocurrent remain major problems for their PV applications....
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| Veröffentlicht in: | Applied physics letters 2021-09, Vol.119 (10), Article 102903 |
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| creator | Lin, Jianjun Shen, Peng Liu, Yuan Yue, Fangyu Chen, Ye Zhou, Zhiyong Yang, Pingxiong Chu, Junhao Duan, Chun-Gang Sun, Lin |
| description | Ferroelectric perovskite oxide materials for photovoltaics (PV) have received considerable attention for their switchable PV responses and above-bandgap photovoltages as a type of new-generation PV device. Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height. |
| doi_str_mv | 10.1063/5.0059637 |
| format | Article |
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Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0059637</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>MELVILLE: AIP Publishing</publisher><subject>Applied physics ; Electric contacts ; Electric fields ; Energy conversion efficiency ; Energy gap ; Ferroelectric materials ; Ferroelectricity ; Indium oxides ; Modulation ; Perovskites ; Photoelectric effect ; Photoelectric emission ; Photovoltages ; Photovoltaic cells ; Photovoltaic effect ; Physical Sciences ; Physics ; Physics, Applied ; Science & Technology ; Thin films</subject><ispartof>Applied physics letters, 2021-09, Vol.119 (10), Article 102903</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height.</description><subject>Applied physics</subject><subject>Electric contacts</subject><subject>Electric fields</subject><subject>Energy conversion efficiency</subject><subject>Energy gap</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Indium oxides</subject><subject>Modulation</subject><subject>Perovskites</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photovoltages</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic effect</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Science & Technology</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>HGBXW</sourceid><recordid>eNqN0E9v2yAYBnA0tVLTrId-A0s7dZNTMAbMsYuSbVKrXNozsuFFI3OMCzjVvv2YHLWnTjvxR7-HFz0IXRO8IpjTW7bCmElOxQe0IFiIkhLSnKEFxpiWXDJygS5j3OcjqyhdILXpQafgdGkd9KY4eDP1bQJTjD998kffp9bpAqzNrPC2sBCCh1OoMH7qeihHCP4Yf7kExVdXbeFh2PHCuv4QP6Jz2_YRrk7rEj1tN4_r7-X97tuP9d19qWklUgm6k7yWDUDNDTSyMoLwijaNbYjWrDaiZUwD62yrBZGa29Z0UkjZ2abDVNMl-jS_Owb_PEFMau-nMOSRqmIC81xKTbK6mZUOPsYAVo3BHdrwWxGs_vanmDr1l-2X2b5A523UDgYNrz4XKFjNWC3zDsusm__Xa5fa5Pyw9tOQcvTzHM2p-f6fv3oXH314g2o0lv4BwyKgWA</recordid><startdate>20210906</startdate><enddate>20210906</enddate><creator>Lin, Jianjun</creator><creator>Shen, Peng</creator><creator>Liu, Yuan</creator><creator>Yue, Fangyu</creator><creator>Chen, Ye</creator><creator>Zhou, Zhiyong</creator><creator>Yang, Pingxiong</creator><creator>Chu, Junhao</creator><creator>Duan, Chun-Gang</creator><creator>Sun, Lin</creator><general>AIP Publishing</general><general>American Institute of Physics</general><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0939-423X</orcidid><orcidid>https://orcid.org/0000-0001-5615-1519</orcidid><orcidid>https://orcid.org/0000-0002-1546-7741</orcidid></search><sort><creationdate>20210906</creationdate><title>Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi2FeMnO6 films</title><author>Lin, Jianjun ; 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Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height.</abstract><cop>MELVILLE</cop><pub>AIP Publishing</pub><doi>10.1063/5.0059637</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-0939-423X</orcidid><orcidid>https://orcid.org/0000-0001-5615-1519</orcidid><orcidid>https://orcid.org/0000-0002-1546-7741</orcidid></addata></record> |
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| subjects | Applied physics Electric contacts Electric fields Energy conversion efficiency Energy gap Ferroelectric materials Ferroelectricity Indium oxides Modulation Perovskites Photoelectric effect Photoelectric emission Photovoltages Photovoltaic cells Photovoltaic effect Physical Sciences Physics Physics, Applied Science & Technology Thin films |
| title | Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi2FeMnO6 films |
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