Power electronics figure-of-merit of ScAlN
A power figure-of-merit (FOM) of ∼62.6–87.3 GW/cm2 is predicted for ScAlN, which represents a value 5–7 times larger than that of GaN. The parameters for the lattice-matched Sc0.18Al0.82N FOM calculation are investigated by first-principles density functional theory (DFT) calculations with the local...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2021-08, Vol.119 (7) |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 7 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 119 |
| creator | Fu, Hanlin Goodrich, Justin C. Ogidi-Ekoko, Onoriode Tansu, Nelson |
| description | A power figure-of-merit (FOM) of ∼62.6–87.3 GW/cm2 is predicted for ScAlN, which represents a value 5–7 times larger than that of GaN. The parameters for the lattice-matched Sc0.18Al0.82N FOM calculation are investigated by first-principles density functional theory (DFT) calculations with the local density approximation. An energy gap of 5.65 eV and an electron effective mass of 0.46m0 are obtained from the DFT band structure calculation of Sc0.1875Al0.8125N. The electron mobility of Sc0.18Al0.82N is simulated based on Boltzmann transport equations, which consider scatterings by ionized impurities, dislocations, alloy scattering, acoustic phonons, and optical phonons. The remarkable power FOM shows that lattice-matched Sc0.18Al0.82N possesses a large breakdown voltage and low specific on-resistance, which suggests the great potential for Sc0.18Al0.82N to be implemented in high-voltage power electronics for improved device performance. |
| doi_str_mv | 10.1063/5.0057412 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_5_0057412</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2561581986</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-705a87b635d8eb8ac98a5e843f5847c5f352e3dd1af4d44f97ec41c048303cb13</originalsourceid><addsrcrecordid>eNp90E9LAzEQBfAgCtbqwW-w4MlCamYns8keS_EfFBXUc0iziWxpm5psFb-9KxU9CJ6GgR_vwWPsFMQYRIUXNBaClIRyjw1AKMURQO-zgRACeVUTHLKjnBf9SyXigI0e4rtPhV9616W4bl0uQvuyTZ7HwFc-tV0RQ_HoJsu7Y3YQ7DL7k-87ZM9Xl0_TGz67v76dTmbcYak6rgRZreYVUqP9XFtXa0teSwykpXIUkEqPTQM2yEbKUCvvJDghNQp0c8AhO9vlblJ83frcmUXcpnVfaUqqgDTUuurV-U65FHNOPphNalc2fRgQ5msKQ-Z7it6Odja7trNdG9c_-C2mX2g2TfgP_03-BMeHajo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2561581986</pqid></control><display><type>article</type><title>Power electronics figure-of-merit of ScAlN</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Fu, Hanlin ; Goodrich, Justin C. ; Ogidi-Ekoko, Onoriode ; Tansu, Nelson</creator><creatorcontrib>Fu, Hanlin ; Goodrich, Justin C. ; Ogidi-Ekoko, Onoriode ; Tansu, Nelson</creatorcontrib><description>A power figure-of-merit (FOM) of ∼62.6–87.3 GW/cm2 is predicted for ScAlN, which represents a value 5–7 times larger than that of GaN. The parameters for the lattice-matched Sc0.18Al0.82N FOM calculation are investigated by first-principles density functional theory (DFT) calculations with the local density approximation. An energy gap of 5.65 eV and an electron effective mass of 0.46m0 are obtained from the DFT band structure calculation of Sc0.1875Al0.8125N. The electron mobility of Sc0.18Al0.82N is simulated based on Boltzmann transport equations, which consider scatterings by ionized impurities, dislocations, alloy scattering, acoustic phonons, and optical phonons. The remarkable power FOM shows that lattice-matched Sc0.18Al0.82N possesses a large breakdown voltage and low specific on-resistance, which suggests the great potential for Sc0.18Al0.82N to be implemented in high-voltage power electronics for improved device performance.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0057412</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Boltzmann transport equation ; Density functional theory ; Electron mobility ; Electronics ; Energy gap ; First principles ; Lattice matching ; Mathematical analysis ; Phonons</subject><ispartof>Applied physics letters, 2021-08, Vol.119 (7)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-705a87b635d8eb8ac98a5e843f5847c5f352e3dd1af4d44f97ec41c048303cb13</citedby><cites>FETCH-LOGICAL-c327t-705a87b635d8eb8ac98a5e843f5847c5f352e3dd1af4d44f97ec41c048303cb13</cites><orcidid>0000-0001-8620-7819 ; 0000-0003-4282-9143 ; 0000-0001-8141-3074 ; 0000-0002-3811-9125</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0057412$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Fu, Hanlin</creatorcontrib><creatorcontrib>Goodrich, Justin C.</creatorcontrib><creatorcontrib>Ogidi-Ekoko, Onoriode</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><title>Power electronics figure-of-merit of ScAlN</title><title>Applied physics letters</title><description>A power figure-of-merit (FOM) of ∼62.6–87.3 GW/cm2 is predicted for ScAlN, which represents a value 5–7 times larger than that of GaN. The parameters for the lattice-matched Sc0.18Al0.82N FOM calculation are investigated by first-principles density functional theory (DFT) calculations with the local density approximation. An energy gap of 5.65 eV and an electron effective mass of 0.46m0 are obtained from the DFT band structure calculation of Sc0.1875Al0.8125N. The electron mobility of Sc0.18Al0.82N is simulated based on Boltzmann transport equations, which consider scatterings by ionized impurities, dislocations, alloy scattering, acoustic phonons, and optical phonons. The remarkable power FOM shows that lattice-matched Sc0.18Al0.82N possesses a large breakdown voltage and low specific on-resistance, which suggests the great potential for Sc0.18Al0.82N to be implemented in high-voltage power electronics for improved device performance.</description><subject>Applied physics</subject><subject>Boltzmann transport equation</subject><subject>Density functional theory</subject><subject>Electron mobility</subject><subject>Electronics</subject><subject>Energy gap</subject><subject>First principles</subject><subject>Lattice matching</subject><subject>Mathematical analysis</subject><subject>Phonons</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90E9LAzEQBfAgCtbqwW-w4MlCamYns8keS_EfFBXUc0iziWxpm5psFb-9KxU9CJ6GgR_vwWPsFMQYRIUXNBaClIRyjw1AKMURQO-zgRACeVUTHLKjnBf9SyXigI0e4rtPhV9616W4bl0uQvuyTZ7HwFc-tV0RQ_HoJsu7Y3YQ7DL7k-87ZM9Xl0_TGz67v76dTmbcYak6rgRZreYVUqP9XFtXa0teSwykpXIUkEqPTQM2yEbKUCvvJDghNQp0c8AhO9vlblJ83frcmUXcpnVfaUqqgDTUuurV-U65FHNOPphNalc2fRgQ5msKQ-Z7it6Odja7trNdG9c_-C2mX2g2TfgP_03-BMeHajo</recordid><startdate>20210816</startdate><enddate>20210816</enddate><creator>Fu, Hanlin</creator><creator>Goodrich, Justin C.</creator><creator>Ogidi-Ekoko, Onoriode</creator><creator>Tansu, Nelson</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8620-7819</orcidid><orcidid>https://orcid.org/0000-0003-4282-9143</orcidid><orcidid>https://orcid.org/0000-0001-8141-3074</orcidid><orcidid>https://orcid.org/0000-0002-3811-9125</orcidid></search><sort><creationdate>20210816</creationdate><title>Power electronics figure-of-merit of ScAlN</title><author>Fu, Hanlin ; Goodrich, Justin C. ; Ogidi-Ekoko, Onoriode ; Tansu, Nelson</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-705a87b635d8eb8ac98a5e843f5847c5f352e3dd1af4d44f97ec41c048303cb13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Boltzmann transport equation</topic><topic>Density functional theory</topic><topic>Electron mobility</topic><topic>Electronics</topic><topic>Energy gap</topic><topic>First principles</topic><topic>Lattice matching</topic><topic>Mathematical analysis</topic><topic>Phonons</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fu, Hanlin</creatorcontrib><creatorcontrib>Goodrich, Justin C.</creatorcontrib><creatorcontrib>Ogidi-Ekoko, Onoriode</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fu, Hanlin</au><au>Goodrich, Justin C.</au><au>Ogidi-Ekoko, Onoriode</au><au>Tansu, Nelson</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Power electronics figure-of-merit of ScAlN</atitle><jtitle>Applied physics letters</jtitle><date>2021-08-16</date><risdate>2021</risdate><volume>119</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A power figure-of-merit (FOM) of ∼62.6–87.3 GW/cm2 is predicted for ScAlN, which represents a value 5–7 times larger than that of GaN. The parameters for the lattice-matched Sc0.18Al0.82N FOM calculation are investigated by first-principles density functional theory (DFT) calculations with the local density approximation. An energy gap of 5.65 eV and an electron effective mass of 0.46m0 are obtained from the DFT band structure calculation of Sc0.1875Al0.8125N. The electron mobility of Sc0.18Al0.82N is simulated based on Boltzmann transport equations, which consider scatterings by ionized impurities, dislocations, alloy scattering, acoustic phonons, and optical phonons. The remarkable power FOM shows that lattice-matched Sc0.18Al0.82N possesses a large breakdown voltage and low specific on-resistance, which suggests the great potential for Sc0.18Al0.82N to be implemented in high-voltage power electronics for improved device performance.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0057412</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-8620-7819</orcidid><orcidid>https://orcid.org/0000-0003-4282-9143</orcidid><orcidid>https://orcid.org/0000-0001-8141-3074</orcidid><orcidid>https://orcid.org/0000-0002-3811-9125</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2021-08, Vol.119 (7) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_5_0057412 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Boltzmann transport equation Density functional theory Electron mobility Electronics Energy gap First principles Lattice matching Mathematical analysis Phonons |
| title | Power electronics figure-of-merit of ScAlN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T06%3A25%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Power%20electronics%20figure-of-merit%20of%20ScAlN&rft.jtitle=Applied%20physics%20letters&rft.au=Fu,%20Hanlin&rft.date=2021-08-16&rft.volume=119&rft.issue=7&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0057412&rft_dat=%3Cproquest_cross%3E2561581986%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2561581986&rft_id=info:pmid/&rfr_iscdi=true |