Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars
Color centers that emit light at telecommunication wavelengths are promising candidates for future quantum technologies. A pressing challenge for the broad use of these color centers is the typically low collection efficiency from bulk samples. Here, we demonstrate enhancements of the emission colle...
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| Veröffentlicht in: | Journal of applied physics 2021-10, Vol.130 (14) |
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| container_title | Journal of applied physics |
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| creator | Parker, R. A. Dontschuk, N. Sato, S.-I. Lew, C. T.-K. Reineck, P. Nadarajah, A. Ohshima, T. Gibson, B. C. Castelletto, S. McCallum, J. C. Johnson, B. C. |
| description | Color centers that emit light at telecommunication wavelengths are promising candidates for future quantum technologies. A pressing challenge for the broad use of these color centers is the typically low collection efficiency from bulk samples. Here, we demonstrate enhancements of the emission collection efficiency for
Er
3
+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics. |
| doi_str_mv | 10.1063/5.0055100 |
| format | Article |
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Er
3
+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0055100</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Color centers ; Emission ; Erbium ; Ion implantation ; Photoluminescence ; Silicon carbide</subject><ispartof>Journal of applied physics, 2021-10, Vol.130 (14)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c437t-a1bf35368cc634adb834883f654153824c59785813a6416dfba078f4cfc404b63</citedby><cites>FETCH-LOGICAL-c437t-a1bf35368cc634adb834883f654153824c59785813a6416dfba078f4cfc404b63</cites><orcidid>0000-0001-6432-4520 ; 0000-0003-1549-937X ; 0000-0002-2174-4178 ; 0000-0002-7109-2796 ; 0000-0002-8675-2291 ; 0000-0001-9359-9400 ; 0000-0002-7850-3164 ; 0000-0001-6061-7537 ; 0000-0002-6692-7728</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0055100$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Parker, R. A.</creatorcontrib><creatorcontrib>Dontschuk, N.</creatorcontrib><creatorcontrib>Sato, S.-I.</creatorcontrib><creatorcontrib>Lew, C. T.-K.</creatorcontrib><creatorcontrib>Reineck, P.</creatorcontrib><creatorcontrib>Nadarajah, A.</creatorcontrib><creatorcontrib>Ohshima, T.</creatorcontrib><creatorcontrib>Gibson, B. C.</creatorcontrib><creatorcontrib>Castelletto, S.</creatorcontrib><creatorcontrib>McCallum, J. C.</creatorcontrib><creatorcontrib>Johnson, B. C.</creatorcontrib><title>Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars</title><title>Journal of applied physics</title><description>Color centers that emit light at telecommunication wavelengths are promising candidates for future quantum technologies. A pressing challenge for the broad use of these color centers is the typically low collection efficiency from bulk samples. Here, we demonstrate enhancements of the emission collection efficiency for
Er
3
+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics.</description><subject>Applied physics</subject><subject>Color centers</subject><subject>Emission</subject><subject>Erbium</subject><subject>Ion implantation</subject><subject>Photoluminescence</subject><subject>Silicon carbide</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LxDAQBuAgCq6rB_9BwJNC10nz0fQoix8LK170HNI0YbO0SU1awX9vZRe8e3ovz8wwL0LXBFYEBL3nKwDOCcAJWhCQdVFxDqdoAVCSQtZVfY4uct4DECJpvUCvm-CSTrbFNjV-6vGwi2Pspt4Hm40NxmIbdnrO3oYR-4Cz77yJARs9D7QWBx1iMfiu0ylfojOnu2yvjrlEH0-P7-uXYvv2vFk_bAvDaDUWmjSOciqkMYIy3TaSMimpE5wRTmXJDK8rySWhWjAiWtdoqKRjxhkGrBF0iW4Oe4cUPyebR7WPUwrzSVVyCfPjrKazuj0ok2LOyTo1JN_r9K0IqN-2FFfHtmZ7d7DZ-FGPPob_4a-Y_qAaWkd_APBYd6o</recordid><startdate>20211014</startdate><enddate>20211014</enddate><creator>Parker, R. 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Er
3
+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0055100</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-6432-4520</orcidid><orcidid>https://orcid.org/0000-0003-1549-937X</orcidid><orcidid>https://orcid.org/0000-0002-2174-4178</orcidid><orcidid>https://orcid.org/0000-0002-7109-2796</orcidid><orcidid>https://orcid.org/0000-0002-8675-2291</orcidid><orcidid>https://orcid.org/0000-0001-9359-9400</orcidid><orcidid>https://orcid.org/0000-0002-7850-3164</orcidid><orcidid>https://orcid.org/0000-0001-6061-7537</orcidid><orcidid>https://orcid.org/0000-0002-6692-7728</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Color centers Emission Erbium Ion implantation Photoluminescence Silicon carbide |
| title | Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars |
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