Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the sa...
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creator | Toguchi, Masachika Miwa, Kazuki Horikiri, Fumimasa Fukuhara, Noboru Narita, Yoshinobu Ichikawa, Osamu Isono, Ryota Tanaka, Takeshi Sato, Taketomo |
description | Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in Vth, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal–insulator–semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the Vth of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations. |
doi_str_mv | 10.1063/5.0051045 |
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Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in Vth, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal–insulator–semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the Vth of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0051045</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Barrier layers ; Etching ; Gallium nitrides ; High electron mobility transistors ; Leakage current ; MIS (semiconductors) ; Semiconductor devices ; Smoothness ; Thickness ; Transistors</subject><ispartof>Journal of applied physics, 2021-07, Vol.130 (2)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in Vth, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal–insulator–semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the Vth of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Barrier layers</subject><subject>Etching</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Leakage current</subject><subject>MIS (semiconductors)</subject><subject>Semiconductor devices</subject><subject>Smoothness</subject><subject>Thickness</subject><subject>Transistors</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kctKAzEUhoMoWC8L3yDgxgqpucwtSym1CvUC6nrIpEknMjMZk1ToA_mephd1Ibg4nMX5znfgPwCcETwiOGNX6QjjlOAk3QMDgguO8jTF-2CAMSWo4Dk_BEfev2FMSMH4AHw-q0ajoFxrOhFMt4DSdkHI0CjvYV_bYJFqlAzOylq1RooGXoxn6GkyHkIVZL1e0dZBLSoXpxtFbRZ1s4LLzsRJC52SUabmaCGCgtfNVDxcxdpg3_IOtbYyjQkrGJzovPHBOg8vbif3L354Ag60aLw63fVj8HozeRnfotnj9G58PUMyyWlAmSJijpnO00rFJivKJeWaxUQSQTUTc1EQnCccFywhmMqKERFjoDyXOckKdgzOt97e2fel8qF8s0vXxZMlTROeUMazPFLDLSWd9d4pXfbOtMKtSoLL9RfKtNx9IbKXW9ZLE2I6tvuBP6z7Bct-rv-D_5q_AP9wluY</recordid><startdate>20210714</startdate><enddate>20210714</enddate><creator>Toguchi, Masachika</creator><creator>Miwa, Kazuki</creator><creator>Horikiri, Fumimasa</creator><creator>Fukuhara, Noboru</creator><creator>Narita, Yoshinobu</creator><creator>Ichikawa, Osamu</creator><creator>Isono, Ryota</creator><creator>Tanaka, Takeshi</creator><creator>Sato, Taketomo</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6710-3045</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid><orcidid>https://orcid.org/0000-0002-6049-9646</orcidid></search><sort><creationdate>20210714</creationdate><title>Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)</title><author>Toguchi, Masachika ; Miwa, Kazuki ; Horikiri, Fumimasa ; Fukuhara, Noboru ; Narita, Yoshinobu ; Ichikawa, Osamu ; Isono, Ryota ; Tanaka, Takeshi ; Sato, Taketomo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-6e1ad03f75be03fcb29c29f30514a2f3ada8107490834102cb31a839297c71683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Barrier layers</topic><topic>Etching</topic><topic>Gallium nitrides</topic><topic>High electron mobility transistors</topic><topic>Leakage current</topic><topic>MIS (semiconductors)</topic><topic>Semiconductor devices</topic><topic>Smoothness</topic><topic>Thickness</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Toguchi, Masachika</creatorcontrib><creatorcontrib>Miwa, Kazuki</creatorcontrib><creatorcontrib>Horikiri, Fumimasa</creatorcontrib><creatorcontrib>Fukuhara, Noboru</creatorcontrib><creatorcontrib>Narita, Yoshinobu</creatorcontrib><creatorcontrib>Ichikawa, Osamu</creatorcontrib><creatorcontrib>Isono, Ryota</creatorcontrib><creatorcontrib>Tanaka, Takeshi</creatorcontrib><creatorcontrib>Sato, Taketomo</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Toguchi, Masachika</au><au>Miwa, Kazuki</au><au>Horikiri, Fumimasa</au><au>Fukuhara, Noboru</au><au>Narita, Yoshinobu</au><au>Ichikawa, Osamu</au><au>Isono, Ryota</au><au>Tanaka, Takeshi</au><au>Sato, Taketomo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)</atitle><jtitle>Journal of applied physics</jtitle><date>2021-07-14</date><risdate>2021</risdate><volume>130</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in Vth, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal–insulator–semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the Vth of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0051045</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-6710-3045</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid><orcidid>https://orcid.org/0000-0002-6049-9646</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Aluminum gallium nitrides Applied physics Barrier layers Etching Gallium nitrides High electron mobility transistors Leakage current MIS (semiconductors) Semiconductor devices Smoothness Thickness Transistors |
title | Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) |
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