Switching the fracture toughness of single-crystal ZnS using light irradiation
An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (0...
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| Veröffentlicht in: | Applied physics letters 2021-04, Vol.118 (15) |
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| container_title | Applied physics letters |
| container_volume | 118 |
| creator | Zhu, Tingting Ding, Kuan Oshima, Yu Amiri, Anahid Bruder, Enrico Stark, Robert W. Durst, Karsten Matsunaga, Katsuyuki Nakamura, Atsutomo Fang, Xufei |
| description | An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation. |
| doi_str_mv | 10.1063/5.0047306 |
| format | Article |
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Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0047306</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Crack opening displacement ; Crack tips ; Darkness ; Dislocation mobility ; Fracture toughness ; Heat treating ; Light irradiation ; Mechanical tests ; Shielding ; Single crystals ; Ultraviolet radiation</subject><ispartof>Applied physics letters, 2021-04, Vol.118 (15)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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Herein, we report that UV (365 nm) light irradiation during mechanical testing dramatically decreases the fracture toughness of ZnS. The crack tip toughness on a (001) single-crystal ZnS, as measured by the near-tip crack opening displacement method, is increased by ∼45% in complete darkness compared to that in UV light. The increase in fracture toughness is attributed to a significant increase in the dislocation mobility in darkness, as explained by the crack tip dislocation shielding model. Our finding suggests a route toward controlling the fracture toughness of photoplastic semiconductors by tuning the light irradiation.</description><subject>Applied physics</subject><subject>Crack opening displacement</subject><subject>Crack tips</subject><subject>Darkness</subject><subject>Dislocation mobility</subject><subject>Fracture toughness</subject><subject>Heat treating</subject><subject>Light irradiation</subject><subject>Mechanical tests</subject><subject>Shielding</subject><subject>Single crystals</subject><subject>Ultraviolet radiation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90FFLwzAQAOAgCs7pg_8g4JNC5yVp2uZRhlNh6MP0xZeQpumaUZuZpMr-vZ0b-iD4dNzdxx13CJ0TmBDI2DWfAKQ5g-wAjQjkecIIKQ7RCABYkglOjtFJCKsh5ZSxEXpcfNqoG9stcWwMrr3SsfcGR9cvm86EgF2Nw9BuTaL9JkTV4tdugfttDbd22URsvVeVVdG67hQd1aoN5mwfx-hldvs8vU_mT3cP05t5olNaxKTMlDIgSpqWOeeUU5KmVGQlZSIvlapMoUquIVelroU2oqhqDiavGE8rClqxMbrYzV17996bEOXK9b4bVkrKCWOCphwGdblT2rsQvKnl2ts35TeSgNy-S3K5f9dgr3Y2aBu_b_nBH87_Qrmu6v_w38lfb6J5Og</recordid><startdate>20210412</startdate><enddate>20210412</enddate><creator>Zhu, Tingting</creator><creator>Ding, Kuan</creator><creator>Oshima, Yu</creator><creator>Amiri, Anahid</creator><creator>Bruder, Enrico</creator><creator>Stark, Robert W.</creator><creator>Durst, Karsten</creator><creator>Matsunaga, Katsuyuki</creator><creator>Nakamura, Atsutomo</creator><creator>Fang, Xufei</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9893-6349</orcidid><orcidid>https://orcid.org/0000-0002-4324-1512</orcidid><orcidid>https://orcid.org/0000-0002-3887-0111</orcidid></search><sort><creationdate>20210412</creationdate><title>Switching the fracture toughness of single-crystal ZnS using light irradiation</title><author>Zhu, Tingting ; Ding, Kuan ; Oshima, Yu ; Amiri, Anahid ; Bruder, Enrico ; Stark, Robert W. ; Durst, Karsten ; Matsunaga, Katsuyuki ; Nakamura, Atsutomo ; Fang, Xufei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-b6aae09b24b755252144296b2397baade8ab5c07abcf9ce98df50e7d354d20ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Crack opening displacement</topic><topic>Crack tips</topic><topic>Darkness</topic><topic>Dislocation mobility</topic><topic>Fracture toughness</topic><topic>Heat treating</topic><topic>Light irradiation</topic><topic>Mechanical tests</topic><topic>Shielding</topic><topic>Single crystals</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Tingting</creatorcontrib><creatorcontrib>Ding, Kuan</creatorcontrib><creatorcontrib>Oshima, Yu</creatorcontrib><creatorcontrib>Amiri, Anahid</creatorcontrib><creatorcontrib>Bruder, Enrico</creatorcontrib><creatorcontrib>Stark, Robert W.</creatorcontrib><creatorcontrib>Durst, Karsten</creatorcontrib><creatorcontrib>Matsunaga, Katsuyuki</creatorcontrib><creatorcontrib>Nakamura, Atsutomo</creatorcontrib><creatorcontrib>Fang, Xufei</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Tingting</au><au>Ding, Kuan</au><au>Oshima, Yu</au><au>Amiri, Anahid</au><au>Bruder, Enrico</au><au>Stark, Robert W.</au><au>Durst, Karsten</au><au>Matsunaga, Katsuyuki</au><au>Nakamura, Atsutomo</au><au>Fang, Xufei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Switching the fracture toughness of single-crystal ZnS using light irradiation</atitle><jtitle>Applied physics letters</jtitle><date>2021-04-12</date><risdate>2021</risdate><volume>118</volume><issue>15</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>An enormous change in the dislocation-mediated plasticity has been found in a bulk semiconductor that exhibits the photoplastic effect. 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| ispartof | Applied physics letters, 2021-04, Vol.118 (15) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Crack opening displacement Crack tips Darkness Dislocation mobility Fracture toughness Heat treating Light irradiation Mechanical tests Shielding Single crystals Ultraviolet radiation |
| title | Switching the fracture toughness of single-crystal ZnS using light irradiation |
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