$Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates$

Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Ga-rich zones created along macrosteps in n-AlGaN plausibly function as electron pathways of AlGaN-based deep-ultraviolet (DUV) LEDs fabricated on AlN templates using 1.0°-miscut c(0001) sapphire substrates toward the m[1-100] axis. This work was performed to clarify AlN mole fractions (xAl) of Ga-r...

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Veröffentlicht in:	Journal of applied physics 2021-04, Vol.129 (16)
Hauptverfasser:	Nagasawa, Yosuke, Hirano, Akira, Ippommatsu, Masamichi, Sako, Hideki, Hashimoto, Ai, Sugie, Ryuichi, Honda, Yoshio, Amano, Hiroshi, Akasaki, Isamu, Kojima, Kazunobu, Chichibu, Shigefusa F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Aluminum nitride Applied physics Backscattering Cathodoluminescence Diffraction patterns Edgelines Electron diffraction Microscopy Sapphire Scanning electron microscopy Scanning transmission electron microscopy Substrates
Online-Zugang:	Volltext
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