Impurity band assisted carrier relaxation in Cr doped topological insulator Bi2Se3
Topological insulators (TIs) with unique band structures have wide application prospects in the fields of ultrafast optical and spintronic devices. The dynamics of hot carriers plays a key role in these TI-based devices. In this work, using the time- and angle-resolved photoemission spectroscopy tec...
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| Veröffentlicht in: | Applied physics letters 2021-02, Vol.118 (8) |
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| creator | Tu, Jian Zhao, Yafei Zhang, Xiaoqian Nie, Zhonghui Li, Yao Zhang, Yilin Turcu, Ion Cristian Edmond Poletto, Luca Frassetto, Fabio Ruan, Xuezhong Zhong, Wenbin Wang, Xuefeng Liu, Wenqing Zhang, Yu Zhang, Rong Xu, Yongbing He, Liang |
| description | Topological insulators (TIs) with unique band structures have wide application prospects in the fields of ultrafast optical and spintronic devices. The dynamics of hot carriers plays a key role in these TI-based devices. In this work, using the time- and angle-resolved photoemission spectroscopy technique, the relaxation process of the hot carriers in Cr-doped Bi2Se3 has been systematically studied since the ferromagnetic TI is one of the key building blocks for next-generation spintronics. It is found that electronic temperature (Te) and chemical potential (μ) decrease faster with the increase in the Cr doping concentration. Similarly, the lifetime (τ) of the excited electrons also decreases with more Cr doped into Bi2Se3. The results suggest a mechanism of impurity band-assisted carrier relaxation, where the impurity band within the bulk bandgap introduced by Cr doping provides significant recombination channels for the excited electrons. This work directly illustrates the dynamic process of the photon-generated carriers in Cr-doped Bi2Se3, which is expected to promote the applications of (Bi1-xCrx)2Se3 in photoelectric devices. |
| doi_str_mv | 10.1063/5.0039440 |
| format | Article |
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The dynamics of hot carriers plays a key role in these TI-based devices. In this work, using the time- and angle-resolved photoemission spectroscopy technique, the relaxation process of the hot carriers in Cr-doped Bi2Se3 has been systematically studied since the ferromagnetic TI is one of the key building blocks for next-generation spintronics. It is found that electronic temperature (Te) and chemical potential (μ) decrease faster with the increase in the Cr doping concentration. Similarly, the lifetime (τ) of the excited electrons also decreases with more Cr doped into Bi2Se3. The results suggest a mechanism of impurity band-assisted carrier relaxation, where the impurity band within the bulk bandgap introduced by Cr doping provides significant recombination channels for the excited electrons. This work directly illustrates the dynamic process of the photon-generated carriers in Cr-doped Bi2Se3, which is expected to promote the applications of (Bi1-xCrx)2Se3 in photoelectric devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0039440</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chemical potential ; Chromium ; Doping ; Electron recombination ; Electrons ; Ferromagnetism ; Impurities ; Photoelectric emission ; Photoelectricity ; Spintronics ; Topological insulators</subject><ispartof>Applied physics letters, 2021-02, Vol.118 (8)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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This work directly illustrates the dynamic process of the photon-generated carriers in Cr-doped Bi2Se3, which is expected to promote the applications of (Bi1-xCrx)2Se3 in photoelectric devices.</description><subject>Applied physics</subject><subject>Chemical potential</subject><subject>Chromium</subject><subject>Doping</subject><subject>Electron recombination</subject><subject>Electrons</subject><subject>Ferromagnetism</subject><subject>Impurities</subject><subject>Photoelectric emission</subject><subject>Photoelectricity</subject><subject>Spintronics</subject><subject>Topological insulators</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0HAlcLUvGey1OKjUBB8rENmkpGU6WRMMmL_vdEWXQiuLvfcj3M5B4BTjGYYCXrJZwhRyRjaAxOMyrKgGFf7YIKyXAjJ8SE4inGVV04onYDHxXoYg0sbWOveQB2ji8ka2OgQnA0w2E5_6OR8D10P5wEaP-Rz8oPv_KtrdJf1OHY6-QCvHXmy9BgctLqL9mQ3p-Dl9uZ5fl8sH-4W86tl0VBBUlEKIpmsrNFIYMR4Iy1ipiWW64pbaaikbVvWWopGWGy4LIkmUphKk8rUFaJTcLb1HYJ_G21MauXH0OeXijBJGCW44pk631JN8DEG26ohuLUOG4WR-qpMcbWrLLMXWzY2Ln2H_oHfffgF1WDa_-C_zp9hS3lU</recordid><startdate>20210222</startdate><enddate>20210222</enddate><creator>Tu, Jian</creator><creator>Zhao, Yafei</creator><creator>Zhang, Xiaoqian</creator><creator>Nie, Zhonghui</creator><creator>Li, Yao</creator><creator>Zhang, Yilin</creator><creator>Turcu, Ion Cristian Edmond</creator><creator>Poletto, Luca</creator><creator>Frassetto, Fabio</creator><creator>Ruan, Xuezhong</creator><creator>Zhong, Wenbin</creator><creator>Wang, Xuefeng</creator><creator>Liu, Wenqing</creator><creator>Zhang, Yu</creator><creator>Zhang, Rong</creator><creator>Xu, Yongbing</creator><creator>He, Liang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5279-0097</orcidid><orcidid>https://orcid.org/0000-0001-5528-1995</orcidid><orcidid>https://orcid.org/0000-0002-0289-6301</orcidid><orcidid>https://orcid.org/0000-0002-3472-7895</orcidid></search><sort><creationdate>20210222</creationdate><title>Impurity band assisted carrier relaxation in Cr doped topological insulator Bi2Se3</title><author>Tu, Jian ; 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| subjects | Applied physics Chemical potential Chromium Doping Electron recombination Electrons Ferromagnetism Impurities Photoelectric emission Photoelectricity Spintronics Topological insulators |
| title | Impurity band assisted carrier relaxation in Cr doped topological insulator Bi2Se3 |
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