High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers

We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like lea...

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Veröffentlicht in:Applied physics letters 2020-12, Vol.117 (26)
Hauptverfasser: Hanada, Takanori, Ohmagari, Shinya, Kaneko, Junichi H., Umezawa, Hitoshi
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container_title Applied physics letters
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creator Hanada, Takanori
Ohmagari, Shinya
Kaneko, Junichi H.
Umezawa, Hitoshi
description We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1.
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subjects Applied physics
Correlation analysis
Correlation coefficients
Cracks
Crystal defects
Crystallites
Diamonds
Electric field strength
Electrical properties
Factor analysis
Leakage current
Schottky diodes
Single crystals
Surface defects
title High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers
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