High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers
We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like lea...
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Veröffentlicht in: | Applied physics letters 2020-12, Vol.117 (26) |
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creator | Hanada, Takanori Ohmagari, Shinya Kaneko, Junichi H. Umezawa, Hitoshi |
description | We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1. |
doi_str_mv | 10.1063/5.0027729 |
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Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0027729</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Correlation analysis ; Correlation coefficients ; Cracks ; Crystal defects ; Crystallites ; Diamonds ; Electric field strength ; Electrical properties ; Factor analysis ; Leakage current ; Schottky diodes ; Single crystals ; Surface defects</subject><ispartof>Applied physics letters, 2020-12, Vol.117 (26)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1.</description><subject>Applied physics</subject><subject>Correlation analysis</subject><subject>Correlation coefficients</subject><subject>Cracks</subject><subject>Crystal defects</subject><subject>Crystallites</subject><subject>Diamonds</subject><subject>Electric field strength</subject><subject>Electrical properties</subject><subject>Factor analysis</subject><subject>Leakage current</subject><subject>Schottky diodes</subject><subject>Single crystals</subject><subject>Surface defects</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90M9LwzAUB_AgCs7pwf8g4EkhM2mWNjnKUCcMPKjnkubHmtk1NUkn_e-tbOhB8PR47334PngAXBI8Izint2yGcVYUmTgCE4KLAlFC-DGYYIwpygUjp-Asxs3YsozSCdgt3bqGgzONhn3rrA9blwboWthF02uPdiYkp2QDtZNb32r4omqf0vsAKxmCM2FceG0itLIKI0xGQ9_CWjYWuVbVMLp23RikwhDTGPMprQnxHJxY2URzcahT8PZw_7pYotXz49PiboUUFTQhRoSiVuKqygshFRGMFprjSs41lTzTRHBmK5lnXLFKC2W0YpqPQ5xLwWlOp-Bqn9sF_9GbmMqN70M7niyzeUF5ngtORnW9Vyr4GIOxZRfcVoahJLj8fmvJysNbR3uzt1G5JJPz7Q_e-fALy07b__Df5C_Wc4f4</recordid><startdate>20201228</startdate><enddate>20201228</enddate><creator>Hanada, Takanori</creator><creator>Ohmagari, Shinya</creator><creator>Kaneko, Junichi H.</creator><creator>Umezawa, Hitoshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3778-0157</orcidid><orcidid>https://orcid.org/0000-0002-0838-4497</orcidid><orcidid>https://orcid.org/0000-0001-5636-2316</orcidid></search><sort><creationdate>20201228</creationdate><title>High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers</title><author>Hanada, Takanori ; Ohmagari, Shinya ; Kaneko, Junichi H. ; Umezawa, Hitoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-519c3fa0bb679ac19537d80ba4d3a82d1985fba628c5bd9cedc5d898506a98363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Correlation analysis</topic><topic>Correlation coefficients</topic><topic>Cracks</topic><topic>Crystal defects</topic><topic>Crystallites</topic><topic>Diamonds</topic><topic>Electric field strength</topic><topic>Electrical properties</topic><topic>Factor analysis</topic><topic>Leakage current</topic><topic>Schottky diodes</topic><topic>Single crystals</topic><topic>Surface defects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hanada, Takanori</creatorcontrib><creatorcontrib>Ohmagari, Shinya</creatorcontrib><creatorcontrib>Kaneko, Junichi H.</creatorcontrib><creatorcontrib>Umezawa, Hitoshi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hanada, Takanori</au><au>Ohmagari, Shinya</au><au>Kaneko, Junichi H.</au><au>Umezawa, Hitoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers</atitle><jtitle>Applied physics letters</jtitle><date>2020-12-28</date><risdate>2020</risdate><volume>117</volume><issue>26</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0027729</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3778-0157</orcidid><orcidid>https://orcid.org/0000-0002-0838-4497</orcidid><orcidid>https://orcid.org/0000-0001-5636-2316</orcidid></addata></record> |
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subjects | Applied physics Correlation analysis Correlation coefficients Cracks Crystal defects Crystallites Diamonds Electric field strength Electrical properties Factor analysis Leakage current Schottky diodes Single crystals Surface defects |
title | High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers |
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