Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing

We have demonstrated wide bandgap and composition range β-(AlxGa1−x)2O3 thin films by employing thermal annealing of β-Ga2O3/sapphire templates. With proper annealing conditions at 1000–1500 °C, the β-Ga2O3 thin films transformed to the β-(AlxGa1−x)2O3 thin films with different bandgaps and composit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2021-01, Vol.118 (3)
Hauptverfasser:	Liao, Che-Hao, Li, Kuang-Hui, Torres-Castanedo, Carlos G., Zhang, Guozheng, Li, Xiaohang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Annealing Applied physics Beta phase Composition Diffusion Energy gap Evaluation Film thickness Gallium oxides Interdiffusion Sapphire Secondary ion mass spectrometry Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!