Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN2X2 (M = Mo, W; X = F, H)
The valley degree of freedom of electrons in two-dimensional systems enables the unprecedented exploration of some physical properties as well as promising device applications. However, suitable two-dimensional valleytronic materials, especially with strong spin-valley coupling, are rare. In this wo...
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Veröffentlicht in: | Applied physics letters 2020-10, Vol.117 (17) |
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Format: | Artikel |
Sprache: | eng |
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