Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Spin orbit torque-driven magnetization switching in perpendicularly magnetized thin film relies on an extra in-plane magnetic field to break the in-plane magnetic symmetry, which is an obstacle for the integration of spin–orbit torque-based spintronic devices. Here, we propose a simple method to rea...

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Veröffentlicht in:Applied physics letters 2020-10, Vol.117 (14), Article 142404
Hauptverfasser: Chang, Meixia, Yun, Jijun, Zhai, Yongbo, Cui, Baoshan, Zuo, Yalu, Yu, Guoqiang, Xi, Li
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Sprache:eng
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Zusammenfassung:Spin orbit torque-driven magnetization switching in perpendicularly magnetized thin film relies on an extra in-plane magnetic field to break the in-plane magnetic symmetry, which is an obstacle for the integration of spin–orbit torque-based spintronic devices. Here, we propose a simple method to realize the field-free spin–orbit torque-driven magnetization switching by exploiting a tilted magnetic anisotropy, which is caused by the direct coupling of two ferromagnetic layers in the Pt/Co/FeNi/Ta structure. When preparing the sample, a 1000 Oe in-plane magnetic field was applied to ensure the magnetic moment deviating a small angle from the out-of-plane direction to this in-plane field direction. We experimentally demonstrate the deterministic field-free magnetization switching in Pt/Co/FeNi/Ta by the field-like spin–orbit torques when the electric current is applied perpendicular to this in-plane field direction. The switching performance is slightly degraded with the critical switching current density and thermal stability factor, respectively, reaching 6.4 × 106 A/cm2 and 25 due to the slightly decreased spin–orbit torque efficiency and perpendicular magnetic anisotropy with introducing the FeNi layers. Our work paves the way for realizing the field-free magnetization switching by spin–orbit torques.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0025132