Formation of ultra-thin Ge1− x Sn x /Ge1− x − y Si x Sn y quantum heterostructures and their electrical properties for realizing resonant tunneling diode

Huge thermal noise owing to the narrow energy bandgap is one of the critical issues for group IV-based photonics in the mid-infrared regime. With this motivation, we examined to form Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures (QHs) by molecular beam epitaxy for realizing resonant tunneling diod...

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Veröffentlicht in:	Applied physics letters 2020-12, Vol.117 (23)
Hauptverfasser:	Suwito, Galih Ramadana, Fukuda, Masahiro, Suprayoga, Edi, Ohtsuka, Masahiro, Hasdeo, Eddwi Hesky, Nugraha, Ahmad Ridwan Tresna, Sakashita, Mitsuo, Shibayama, Shigehisa, Nakatsuka, Osamu
Format:	Artikel
Sprache:	eng
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