Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

This work investigates the effect of process temperature on one-transistor-one-capacitor ferroelectric random access memory (1T1C FeRAM) cells fabricated with a HfZrOx ultrathin film applied as the 1T1C capacitor. Traditionally, the capacitor in 1T1C devices is grown on the drain, and such a structu...

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Veröffentlicht in:	Applied physics letters 2020-07, Vol.117 (2)
Hauptverfasser:	Lin, Yun-Hsuan, Chen, Wen-Chung, Chen, Po-Hsun, Lin, Chih-Yang, Chang, Kai-Chun, Chang, Yen-Cheng, Yeh, Chien-Hung, Lin, Chein-Yu, Jin, Fu-Yuan, Chen, Kuan-Hsu, Kuo, Ting-Tzu, Hung, Wei-Chieh, Lee, Ya-Huan, Lin, Jia-Hong, Chang, Ting-Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Capacitors Deposition Dynamic random access memory Electrical properties Ferroelectric materials Ferroelectricity Grain size Leakage current Random access memory Semiconductor devices Thin films Transistors
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