Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces
Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) het...
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| Veröffentlicht in: | Applied physics letters 2020-06, Vol.116 (25) |
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| container_title | Applied physics letters |
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| creator | Singh, Deependra Kumar Roul, Basanta Pant, Rohit Chowdhury, Arun Malla Nanda, K. K. Krupanidhi, S. B. |
| description | Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets [valence band offset (VBO) and conduction band offset (CBO)] at the heterojunctions are determined by high-resolution x-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. Such determination of the band offsets of 2D/3D heterojunctions paves a way to understand and design the futuristic photonic and electronic devices using these material systems. |
| doi_str_mv | 10.1063/5.0009469 |
| format | Article |
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K. ; Krupanidhi, S. B.</creator><creatorcontrib>Singh, Deependra Kumar ; Roul, Basanta ; Pant, Rohit ; Chowdhury, Arun Malla ; Nanda, K. K. ; Krupanidhi, S. B.</creatorcontrib><description>Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets [valence band offset (VBO) and conduction band offset (CBO)] at the heterojunctions are determined by high-resolution x-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. 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K.</creatorcontrib><creatorcontrib>Krupanidhi, S. B.</creatorcontrib><title>Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces</title><title>Applied physics letters</title><description>Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets [valence band offset (VBO) and conduction band offset (CBO)] at the heterojunctions are determined by high-resolution x-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. Such determination of the band offsets of 2D/3D heterojunctions paves a way to understand and design the futuristic photonic and electronic devices using these material systems.</description><subject>Aluminum nitride</subject><subject>Applied physics</subject><subject>Conduction bands</subject><subject>Electronic devices</subject><subject>Electronic properties</subject><subject>Electrons</subject><subject>Gallium nitrides</subject><subject>Heterojunctions</subject><subject>Indium nitride</subject><subject>Molybdenum disulfide</subject><subject>Offsets</subject><subject>Optical properties</subject><subject>Parameters</subject><subject>Photoelectrons</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Valence band</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEUhYMoWKsL3yDgRqXT5meSTJelaluoulDXIZNJdEqbjEkq9O1NacG9m3u5536cAweAa4yGGHE6YkOE0Ljk4xPQw0iIgmJcnYJeVmnBxwyfg4sYV_lkhNIemD-01ppgXIJp15kIvYW1cg1U6_bTbfa6SvDZv5HR7WQ9gDM1gAt39wK_TDLBty5Pq7SJl-DMqnU0V8fdBx9Pj-_TebF8nS2mk2WhKSepoHVVI6GYIsRSrg3RvNS64g0jjaiJVnXFlKY4_2zdNDpL2V4gRAQXSijaBzcH3y74762JSa78NrgcKUmJGeOYszJTdwdKBx9jMFZ2od2osJMYyX1RksljUZm9P7BRt0ml1rv_wT8-_IGyayz9BVO4dRs</recordid><startdate>20200622</startdate><enddate>20200622</enddate><creator>Singh, Deependra Kumar</creator><creator>Roul, Basanta</creator><creator>Pant, Rohit</creator><creator>Chowdhury, Arun Malla</creator><creator>Nanda, K. 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B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces</atitle><jtitle>Applied physics letters</jtitle><date>2020-06-22</date><risdate>2020</risdate><volume>116</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets [valence band offset (VBO) and conduction band offset (CBO)] at the heterojunctions are determined by high-resolution x-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. Such determination of the band offsets of 2D/3D heterojunctions paves a way to understand and design the futuristic photonic and electronic devices using these material systems.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0009469</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3321-8992</orcidid><orcidid>https://orcid.org/0000-0002-4591-5752</orcidid><orcidid>https://orcid.org/0000-0002-7557-7942</orcidid><orcidid>https://orcid.org/0000-0001-9496-1408</orcidid><orcidid>https://orcid.org/0000-0001-6393-0908</orcidid><orcidid>https://orcid.org/0000-0001-7749-6698</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum nitride Applied physics Conduction bands Electronic devices Electronic properties Electrons Gallium nitrides Heterojunctions Indium nitride Molybdenum disulfide Offsets Optical properties Parameters Photoelectrons Pulsed laser deposition Pulsed lasers Sapphire Substrates Thin films Valence band |
| title | Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces |
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