Non-metallic electrical transport properties of a metastable λ-Ti3O5 thin film epitaxially stabilized on a pseudobrookite seed layer
A metastable phase of Ti3O5, λ-Ti3O5, has been studied as a promising optoelectronic material applicable to optical memories and switching devices because it undergoes structural phase transitions, accompanied by changes in optical and electrical properties, under a variety of external stimuli such...
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creator | Chen, Hao Hirose, Yasushi Nakagawa, Kousuke Imoto, Kenata Ohkoshi, Shin-ichi Hasegawa, Tetsuya |
description | A metastable phase of Ti3O5, λ-Ti3O5, has been studied as a promising optoelectronic material applicable to optical memories and switching devices because it undergoes structural phase transitions, accompanied by changes in optical and electrical properties, under a variety of external stimuli such as heat, visible light, pressure, and electrical current. Theoretical calculations and optical and magnetic measurements have suggested that λ-Ti3O5 is a metal. However, its electrical transport properties have not been directly measured to date because λ-Ti3O5 has so far been synthesized only as nanocrystals or aggregates thereof. In this study, we synthesized (100)-oriented λ-Ti3O5 epitaxial thin films on perovskite LaAlO3 (110) substrates by pulsed laser deposition. Precise control of oxygen supply during the growth and introduction of a MgTi2O5 seed layer with a pseudobrookite structure enabled epitaxial growth of λ-Ti3O5. These λ-Ti3O5 epitaxial thin films showed a lower electrical resistivity ρ (∼7.9 × 10−2 Ω cm) than bulk single crystals of β-Ti3O5 (high resistance phase) at 300 K. On the other hand, the ρ value of the λ-Ti3O5 thin films exhibited a semiconducting temperature dependence with negative dρ/dT. |
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Theoretical calculations and optical and magnetic measurements have suggested that λ-Ti3O5 is a metal. However, its electrical transport properties have not been directly measured to date because λ-Ti3O5 has so far been synthesized only as nanocrystals or aggregates thereof. In this study, we synthesized (100)-oriented λ-Ti3O5 epitaxial thin films on perovskite LaAlO3 (110) substrates by pulsed laser deposition. Precise control of oxygen supply during the growth and introduction of a MgTi2O5 seed layer with a pseudobrookite structure enabled epitaxial growth of λ-Ti3O5. These λ-Ti3O5 epitaxial thin films showed a lower electrical resistivity ρ (∼7.9 × 10−2 Ω cm) than bulk single crystals of β-Ti3O5 (high resistance phase) at 300 K. On the other hand, the ρ value of the λ-Ti3O5 thin films exhibited a semiconducting temperature dependence with negative dρ/dT.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0008888</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>MELVILLE: Amer Inst Physics</publisher><subject>Applied physics ; Electrical properties ; Epitaxial growth ; External pressure ; High resistance ; Magnetic measurement ; Metastable phases ; Nanocrystals ; Optical properties ; Optoelectronic devices ; Perovskites ; Phase transitions ; Physical Sciences ; Physics ; Physics, Applied ; Pulsed laser deposition ; Pulsed lasers ; Science & Technology ; Single crystals ; Substrates ; Synthesis ; Temperature dependence ; Thin films ; Titanium oxides ; Transport properties</subject><ispartof>Applied physics letters, 2020-05, Vol.116 (20)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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Theoretical calculations and optical and magnetic measurements have suggested that λ-Ti3O5 is a metal. However, its electrical transport properties have not been directly measured to date because λ-Ti3O5 has so far been synthesized only as nanocrystals or aggregates thereof. In this study, we synthesized (100)-oriented λ-Ti3O5 epitaxial thin films on perovskite LaAlO3 (110) substrates by pulsed laser deposition. Precise control of oxygen supply during the growth and introduction of a MgTi2O5 seed layer with a pseudobrookite structure enabled epitaxial growth of λ-Ti3O5. These λ-Ti3O5 epitaxial thin films showed a lower electrical resistivity ρ (∼7.9 × 10−2 Ω cm) than bulk single crystals of β-Ti3O5 (high resistance phase) at 300 K. On the other hand, the ρ value of the λ-Ti3O5 thin films exhibited a semiconducting temperature dependence with negative dρ/dT.</description><subject>Applied physics</subject><subject>Electrical properties</subject><subject>Epitaxial growth</subject><subject>External pressure</subject><subject>High resistance</subject><subject>Magnetic measurement</subject><subject>Metastable phases</subject><subject>Nanocrystals</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Perovskites</subject><subject>Phase transitions</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Science & Technology</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Synthesis</subject><subject>Temperature dependence</subject><subject>Thin films</subject><subject>Titanium oxides</subject><subject>Transport properties</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkM9O3DAQxq2qldguPfAGlnpqURY7jmPniFblj7SCCz1HjneseuuNg-0tXe48Fe_AM-EoiJ5AnctoZn7fjP0hdETJgpKanfAFIUTm-IBmlAhRMErlRzTLXVbUDacH6HOMm1zykrEZerjyfbGFpJyzGoMDnYLVyuEUVB8HHxIegh8gJAsRe4MVHumYVOcAPz0WN5Zdc5x-2R4b67YYBpvUX5v37fFIWWfvYY19n5VDhN3ad8H73zYBjpAHTu0hHKJPRrkIX17yHP08-3GzvChW1-eXy9NVoUsuUgFAZFnzjgBnjaFQGsFoY5SuGiNy3QhBlS6l6QSRqqO8KYERWUlaC96Qhs3R12lv_tPtDmJqN34X-nyyLStSCUlF9mmOvk2UDj7GAKYdgt2qsG8paUeXW96-uJzZ44m9g86bqC30Gl750WZWl7IiY9BMy_-nl9nIZH2_9Ls-Zen3SZpVU__dV70J__HhH9gOa8OeAURZrZ8</recordid><startdate>20200518</startdate><enddate>20200518</enddate><creator>Chen, Hao</creator><creator>Hirose, Yasushi</creator><creator>Nakagawa, Kousuke</creator><creator>Imoto, Kenata</creator><creator>Ohkoshi, Shin-ichi</creator><creator>Hasegawa, Tetsuya</creator><general>Amer Inst Physics</general><general>American Institute of Physics</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7176-0010</orcidid><orcidid>https://orcid.org/0000-0001-9359-5928</orcidid><orcidid>https://orcid.org/0000-0002-0792-4631</orcidid><orcidid>https://orcid.org/0000-0002-6764-2484</orcidid></search><sort><creationdate>20200518</creationdate><title>Non-metallic electrical transport properties of a metastable λ-Ti3O5 thin film epitaxially stabilized on a pseudobrookite seed layer</title><author>Chen, Hao ; 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Theoretical calculations and optical and magnetic measurements have suggested that λ-Ti3O5 is a metal. However, its electrical transport properties have not been directly measured to date because λ-Ti3O5 has so far been synthesized only as nanocrystals or aggregates thereof. In this study, we synthesized (100)-oriented λ-Ti3O5 epitaxial thin films on perovskite LaAlO3 (110) substrates by pulsed laser deposition. Precise control of oxygen supply during the growth and introduction of a MgTi2O5 seed layer with a pseudobrookite structure enabled epitaxial growth of λ-Ti3O5. These λ-Ti3O5 epitaxial thin films showed a lower electrical resistivity ρ (∼7.9 × 10−2 Ω cm) than bulk single crystals of β-Ti3O5 (high resistance phase) at 300 K. 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subjects | Applied physics Electrical properties Epitaxial growth External pressure High resistance Magnetic measurement Metastable phases Nanocrystals Optical properties Optoelectronic devices Perovskites Phase transitions Physical Sciences Physics Physics, Applied Pulsed laser deposition Pulsed lasers Science & Technology Single crystals Substrates Synthesis Temperature dependence Thin films Titanium oxides Transport properties |
title | Non-metallic electrical transport properties of a metastable λ-Ti3O5 thin film epitaxially stabilized on a pseudobrookite seed layer |
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