High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film
In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to...
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Veröffentlicht in: | Applied physics letters 2020-06, Vol.116 (24) |
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creator | Cheng, Yang Li, Mingkai Wang, Qile Zhang, Teng Meng, Dongxue Lu, Yinmei He, Yunbin |
description | In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections. |
doi_str_mv | 10.1063/5.0005674 |
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The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0005674</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Comparative studies ; Cut off wavelength ; Dark current ; Pulsed laser deposition ; Pulsed lasers ; Response time ; Sapphire ; Substrates ; Ternary alloys ; Thin films ; Tin dioxide</subject><ispartof>Applied physics letters, 2020-06, Vol.116 (24)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections.</description><subject>Applied physics</subject><subject>Comparative studies</subject><subject>Cut off wavelength</subject><subject>Dark current</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Response time</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Ternary alloys</subject><subject>Thin films</subject><subject>Tin dioxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90M9LwzAUB_AgCs7pwf8g4EmhNS8_26MMdcJgB53XkKaJdnRNTarof2_Hhh4ETw8eH76P90XoHEgORLJrkRNChFT8AE2AKJUxgOIQTcYty2Qp4BidpLTeIsrYBC3nzcsr7l30IW5MZx1OoTUxq9qmq_HqGdducHYIEVcmuRqHDs89yVnx2JFc0iXFrm8G89mYFvum3ZyiI2_a5M72c4pWd7dPs3m2WN4_zG4WmaVCDVld0xKILX0FlAvJS18Cp5UTxBpVFE6qynFwRtkKGFhKRsiF4h68tEoUbIoudrl9DG_vLg16Hd5jN57UlAOjFIqCjOpyp2wMKUXndR-bjYlfGoje9qWF3vc12qudTXZ8aGhC94M_QvyFuq_9f_hv8jcC63Xu</recordid><startdate>20200615</startdate><enddate>20200615</enddate><creator>Cheng, Yang</creator><creator>Li, Mingkai</creator><creator>Wang, Qile</creator><creator>Zhang, Teng</creator><creator>Meng, Dongxue</creator><creator>Lu, Yinmei</creator><creator>He, Yunbin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4037-1784</orcidid><orcidid>https://orcid.org/0000-0002-7179-4392</orcidid></search><sort><creationdate>20200615</creationdate><title>High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film</title><author>Cheng, Yang ; Li, Mingkai ; Wang, Qile ; Zhang, Teng ; Meng, Dongxue ; Lu, Yinmei ; He, Yunbin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-dd2910c9fb1245649f9142be50ca788e67be41ea7cb131c20fb14574f1f6c7583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Comparative studies</topic><topic>Cut off wavelength</topic><topic>Dark current</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Response time</topic><topic>Sapphire</topic><topic>Substrates</topic><topic>Ternary alloys</topic><topic>Thin films</topic><topic>Tin dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Yang</creatorcontrib><creatorcontrib>Li, Mingkai</creatorcontrib><creatorcontrib>Wang, Qile</creatorcontrib><creatorcontrib>Zhang, Teng</creatorcontrib><creatorcontrib>Meng, Dongxue</creatorcontrib><creatorcontrib>Lu, Yinmei</creatorcontrib><creatorcontrib>He, Yunbin</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Yang</au><au>Li, Mingkai</au><au>Wang, Qile</au><au>Zhang, Teng</au><au>Meng, Dongxue</au><au>Lu, Yinmei</au><au>He, Yunbin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film</atitle><jtitle>Applied physics letters</jtitle><date>2020-06-15</date><risdate>2020</risdate><volume>116</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0005674</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4037-1784</orcidid><orcidid>https://orcid.org/0000-0002-7179-4392</orcidid></addata></record> |
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subjects | Applied physics Comparative studies Cut off wavelength Dark current Pulsed laser deposition Pulsed lasers Response time Sapphire Substrates Ternary alloys Thin films Tin dioxide |
title | High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film |
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