High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film

In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to...

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Veröffentlicht in:Applied physics letters 2020-06, Vol.116 (24)
Hauptverfasser: Cheng, Yang, Li, Mingkai, Wang, Qile, Zhang, Teng, Meng, Dongxue, Lu, Yinmei, He, Yunbin
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container_issue 24
container_start_page
container_title Applied physics letters
container_volume 116
creator Cheng, Yang
Li, Mingkai
Wang, Qile
Zhang, Teng
Meng, Dongxue
Lu, Yinmei
He, Yunbin
description In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections.
doi_str_mv 10.1063/5.0005674
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subjects Applied physics
Comparative studies
Cut off wavelength
Dark current
Pulsed laser deposition
Pulsed lasers
Response time
Sapphire
Substrates
Ternary alloys
Thin films
Tin dioxide
title High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film
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