Carrier recombination parameters in diamond after surface boron implantation and annealing
An optical pump–probe technique was used to detect spatial distribution of carrier lifetimes across the thickness of a high-quality diamond device structure. Two samples with as-received and boron implanted surfaces were compared to assess the role of implantation and related processing on carrier r...
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| Veröffentlicht in: | Journal of applied physics 2020-06, Vol.127 (24) |
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| container_title | Journal of applied physics |
| container_volume | 127 |
| creator | Grivickas, P. Ščajev, P. Kazuchits, N. Mazanik, A. Korolik, O. Voss, L. F. Conway, A. M. Hall, D. L. Bora, M. Subačius, L. Bikbajevas, V. Grivickas, V. |
| description | An optical pump–probe technique was used to detect spatial distribution of carrier lifetimes across the thickness of a high-quality diamond device structure. Two samples with as-received and boron implanted surfaces were compared to assess the role of implantation and related processing on carrier recombination mechanisms. It was found that the two implanted surfaces show very different behaviors despite undergoing the same treatment. At one of the surfaces, carrier lifetimes remained relatively unchanged, indicating surface recombination rates in the 102–103 cm/s range. At the other surface, carrier lifetimes were almost a magnitude lower and correlated with the locally detected nitrogen vacancy defect that was attributed to the elevated concentration of residual nitrogen. |
| doi_str_mv | 10.1063/5.0004881 |
| format | Article |
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At the other surface, carrier lifetimes were almost a magnitude lower and correlated with the locally detected nitrogen vacancy defect that was attributed to the elevated concentration of residual nitrogen.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0004881</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Boron ; Carrier recombination ; Diamonds ; Implantation ; Spatial distribution</subject><ispartof>Journal of applied physics, 2020-06, Vol.127 (24)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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| subjects | Applied physics Boron Carrier recombination Diamonds Implantation Spatial distribution |
| title | Carrier recombination parameters in diamond after surface boron implantation and annealing |
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