High-speed planar GaAs photoconductors with surface implant layers

Selective implantation of silicon into GaAs is demonstrated as a simple method for modifying the response characteristics of low-doped planar GaAs photoconductors for optoelectronic circuits with varying requirements. Response times and sensitivities of the photoconductors were strongly dependent on...

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Veröffentlicht in:	Applied physics letters 1988-07, Vol.53 (4), p.313-315
Hauptverfasser:	ANDERSON, G. W, PAPANICOLAOU, N. A, THOMPSON, P. E, BOOS, J. B, CARRUTHERS, T. F, MA, D. I, MACK, I. A. G, MODOLO, J. A, KUB, F. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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