Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation

Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the...

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Veröffentlicht in:	Applied physics letters 1988-02, Vol.52 (6), p.465-467
Hauptverfasser:	DAVEY, S. T, DAVIS, J. R, REESON, K. J, HEMMENT, P. L. F
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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