Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation
Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the...
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| Veröffentlicht in: | Applied physics letters 1988-02, Vol.52 (6), p.465-467 |
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| container_end_page | 467 |
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| container_issue | 6 |
| container_start_page | 465 |
| container_title | Applied physics letters |
| container_volume | 52 |
| creator | DAVEY, S. T DAVIS, J. R REESON, K. J HEMMENT, P. L. F |
| description | Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed. |
| doi_str_mv | 10.1063/1.99445 |
| format | Article |
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T ; DAVIS, J. R ; REESON, K. J ; HEMMENT, P. L. F</creator><creatorcontrib>DAVEY, S. T ; DAVIS, J. R ; REESON, K. J ; HEMMENT, P. L. F</creatorcontrib><description>Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.99445</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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F</creatorcontrib><title>Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation</title><title>Applied physics letters</title><description>Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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F</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19880208</creationdate><title>Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation</title><author>DAVEY, S. T ; DAVIS, J. R ; REESON, K. J ; HEMMENT, P. L. F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-1bdd14e724ecf4df6be879563f3356d91b2c3208177c4a570cc1d16d36cc00073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DAVEY, S. T</creatorcontrib><creatorcontrib>DAVIS, J. R</creatorcontrib><creatorcontrib>REESON, K. J</creatorcontrib><creatorcontrib>HEMMENT, P. L. F</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DAVEY, S. T</au><au>DAVIS, J. R</au><au>REESON, K. J</au><au>HEMMENT, P. L. F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation</atitle><jtitle>Applied physics letters</jtitle><date>1988-02-08</date><risdate>1988</risdate><volume>52</volume><issue>6</issue><spage>465</spage><epage>467</epage><pages>465-467</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99445</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1988-02, Vol.52 (6), p.465-467 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_99445 |
| source | AIP Digital Archive |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation |
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