High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy

We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively....

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Veröffentlicht in:	Applied physics letters 1988-03, Vol.52 (12), p.981-983
Hauptverfasser:	VUONG, T. H. H, TSUI, D. C, TSANG, W. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
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