High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy
We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively....
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| Veröffentlicht in: | Applied physics letters 1988-03, Vol.52 (12), p.981-983 |
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| container_issue | 12 |
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| container_title | Applied physics letters |
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| creator | VUONG, T. H. H TSUI, D. C TSANG, W. T |
| description | We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively. Within each series the negative differential resistances occur at nearly equal intervals in the bias voltage. For the first series, the period in the bias voltage increases as the sample is cooled from 77 to 4.2 K. In contrast, the period for the second series remains constant within the same temperature range. We explain these observations by the effect of phonon scattering on the various subbands. |
| doi_str_mv | 10.1063/1.99248 |
| format | Article |
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H. H</creatorcontrib><creatorcontrib>TSUI, D. C</creatorcontrib><creatorcontrib>TSANG, W. T</creatorcontrib><title>High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy</title><title>Applied physics letters</title><description>We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively. Within each series the negative differential resistances occur at nearly equal intervals in the bias voltage. For the first series, the period in the bias voltage increases as the sample is cooled from 77 to 4.2 K. In contrast, the period for the second series remains constant within the same temperature range. 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T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-280eb420de755d229ab3a3e24f8a8e649780741a9307c7a02e1769ab32ff83f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>VUONG, T. H. H</creatorcontrib><creatorcontrib>TSUI, D. C</creatorcontrib><creatorcontrib>TSANG, W. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VUONG, T. H. H</au><au>TSUI, D. C</au><au>TSANG, W. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1988-03-21</date><risdate>1988</risdate><volume>52</volume><issue>12</issue><spage>981</spage><epage>983</epage><pages>981-983</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report the observation of high-field-domain formation in the transport through an In0.53Ga0.47As-InP superlattice. The current-voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively. Within each series the negative differential resistances occur at nearly equal intervals in the bias voltage. For the first series, the period in the bias voltage increases as the sample is cooled from 77 to 4.2 K. In contrast, the period for the second series remains constant within the same temperature range. We explain these observations by the effect of phonon scattering on the various subbands.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99248</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1988-03, Vol.52 (12), p.981-983 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_99248 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxy |
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