Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm−3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level below 5×...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1987-11, Vol.51 (20), p.1597-1599
Hauptverfasser:	LE CORRE, A, CAULET, J, GAUNEAU, M, LOUALICHE, S, L'HARIDON, H, LECROSNIER, D, ROIZES, A, DAVID, J. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vacuum deposition
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!