Tunable electroabsorption in gallium arsenide doping superlattices
Tuning of the optical absorption coefficient by electrical bias in doping superlattices (n-i-p-i crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measure...
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| Veröffentlicht in: | Applied physics letters 1987-04, Vol.50 (14), p.915-917 |
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| container_title | Applied physics letters |
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| creator | CHANG-HASNAIN, C. J HASNAIN, G JOHNSON, N. M DOHLER, G. H MILLER, J. N WHINNERY, J. R DIENES, A |
| description | Tuning of the optical absorption coefficient by electrical bias in doping superlattices (n-i-p-i crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measurement varies by a factor of 240 when the p-n junction bias is changed from 0.4 to −1.5 V. A change of transmission up to 22% at 0.89 μm wavelength through a 2.1-μm-thick n-i-p-i crystal is achieved by varying bias merely between 0.6 and −2.0 V. Moreover, the change of transmission is nearly linear with p-n junction bias. |
| doi_str_mv | 10.1063/1.98031 |
| format | Article |
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R</au><au>DIENES, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable electroabsorption in gallium arsenide doping superlattices</atitle><jtitle>Applied physics letters</jtitle><date>1987-04-06</date><risdate>1987</risdate><volume>50</volume><issue>14</issue><spage>915</spage><epage>917</epage><pages>915-917</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Tuning of the optical absorption coefficient by electrical bias in doping superlattices (n-i-p-i crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measurement varies by a factor of 240 when the p-n junction bias is changed from 0.4 to −1.5 V. A change of transmission up to 22% at 0.89 μm wavelength through a 2.1-μm-thick n-i-p-i crystal is achieved by varying bias merely between 0.6 and −2.0 V. 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| ispartof | Applied physics letters, 1987-04, Vol.50 (14), p.915-917 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_98031 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Tunable electroabsorption in gallium arsenide doping superlattices |
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