Transient enhanced diffusion of phosphorus in silicon

The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well-known transient in boron diffusion. The transient is larger than exp...

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Veröffentlicht in:	Applied physics letters 1986-12, Vol.49 (25), p.1711-1713
Hauptverfasser:	COWERN, N. E. B, GODFREY, D. J, SYKES, D. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Other techniques and industries Physics Transport properties of condensed matter (nonelectronic)
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Zusammenfassung:	The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well-known transient in boron diffusion. The transient is larger than expected from published studies using rapid thermal annealing.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.97223