Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials
Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputt...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1986-07, Vol.49 (4), p.188-190 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | ECCLES, A. J VAN DEN BERG, J. A BROWN, A VICKERMAN, J. C |
| description | Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster-scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low-energy ion bombardment. |
| doi_str_mv | 10.1063/1.97165 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_97165</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8087547</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-b97c2dce2cb9ed84628402b1d17e5b5d6bb54cebfec7e07e100e7e8a2aea33933</originalsourceid><addsrcrecordid>eNo9kN1LwzAUxYMoOKf4LwQRfOrMR9O0jzL8goEv-lySm9st0qUjyYT997ab-HS4h985XA4ht5wtOKvkI180mlfqjMw407qQnNfnZMYYk0XVKH5JrlL6Hk8lpJyR_vnHOwyAdOioobAxcY3UB7cHdBSGkKO3--yHQPNA8wZp2u1zxujDmh489m4K-pD2vcmTZ4KjCbd-jI4dR2trJt706ZpcdKPgzZ_OydfL8-fyrVh9vL4vn1YFyFLnwjYahAMUYBt0dVmJumTCcsc1KqtcZa0qAW2HoJFp5IyhxtoIg0bKRso5uTv1Din7NoHPCJvxoYCQW6WEUBUfoYcTBHFIKWLX7qLfmnhoOWunJVveHpccyfsTuTMJTN9FE8Cnf7xmtVallr9iK3R5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials</title><source>AIP Digital Archive</source><creator>ECCLES, A. J ; VAN DEN BERG, J. A ; BROWN, A ; VICKERMAN, J. C</creator><creatorcontrib>ECCLES, A. J ; VAN DEN BERG, J. A ; BROWN, A ; VICKERMAN, J. C ; Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom</creatorcontrib><description>Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster-scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low-energy ion bombardment.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.97165</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ARGON ; ARGON IONS ; ARSENIC COMPOUNDS ; ARSENIDES ; ATOM COLLISIONS ; CHALCOGENIDES ; CHARGED PARTICLES ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; COLLISIONS ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron and ion emission by liquids and solids; impact phenomena ; ELEMENTS ; Exact sciences and technology ; FLUIDS ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; GASES ; GLASS ; GOLD ; Impact phenomena (including electron spectra and sputtering) ; ION COLLISIONS ; IONS ; METALS ; NONMETALS ; Other electron-impact emission phenomena ; OXIDES ; OXYGEN COMPOUNDS ; Physics ; PNICTIDES ; RARE GASES ; REFRACTORY METAL COMPOUNDS ; SEMIMETALS ; SILICON ; SPUTTERING ; TANTALUM COMPOUNDS ; TANTALUM OXIDES ; TRANSITION ELEMENT COMPOUNDS ; TRANSITION ELEMENTS 640301 -- Atomic, Molecular & Chemical Physics-- Beams & their Reactions</subject><ispartof>Appl. Phys. Lett.; (United States), 1986-07, Vol.49 (4), p.188-190</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-b97c2dce2cb9ed84628402b1d17e5b5d6bb54cebfec7e07e100e7e8a2aea33933</citedby><cites>FETCH-LOGICAL-c347t-b97c2dce2cb9ed84628402b1d17e5b5d6bb54cebfec7e07e100e7e8a2aea33933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,886,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8087547$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5522561$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>ECCLES, A. J</creatorcontrib><creatorcontrib>VAN DEN BERG, J. A</creatorcontrib><creatorcontrib>BROWN, A</creatorcontrib><creatorcontrib>VICKERMAN, J. C</creatorcontrib><creatorcontrib>Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom</creatorcontrib><title>Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials</title><title>Appl. Phys. Lett.; (United States)</title><description>Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster-scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low-energy ion bombardment.</description><subject>ARGON</subject><subject>ARGON IONS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>ATOM COLLISIONS</subject><subject>CHALCOGENIDES</subject><subject>CHARGED PARTICLES</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>COLLISIONS</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>ELEMENTS</subject><subject>Exact sciences and technology</subject><subject>FLUIDS</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>GASES</subject><subject>GLASS</subject><subject>GOLD</subject><subject>Impact phenomena (including electron spectra and sputtering)</subject><subject>ION COLLISIONS</subject><subject>IONS</subject><subject>METALS</subject><subject>NONMETALS</subject><subject>Other electron-impact emission phenomena</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RARE GASES</subject><subject>REFRACTORY METAL COMPOUNDS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SPUTTERING</subject><subject>TANTALUM COMPOUNDS</subject><subject>TANTALUM OXIDES</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><subject>TRANSITION ELEMENTS 640301 -- Atomic, Molecular & Chemical Physics-- Beams & their Reactions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo9kN1LwzAUxYMoOKf4LwQRfOrMR9O0jzL8goEv-lySm9st0qUjyYT997ab-HS4h985XA4ht5wtOKvkI180mlfqjMw407qQnNfnZMYYk0XVKH5JrlL6Hk8lpJyR_vnHOwyAdOioobAxcY3UB7cHdBSGkKO3--yHQPNA8wZp2u1zxujDmh489m4K-pD2vcmTZ4KjCbd-jI4dR2trJt706ZpcdKPgzZ_OydfL8-fyrVh9vL4vn1YFyFLnwjYahAMUYBt0dVmJumTCcsc1KqtcZa0qAW2HoJFp5IyhxtoIg0bKRso5uTv1Din7NoHPCJvxoYCQW6WEUBUfoYcTBHFIKWLX7qLfmnhoOWunJVveHpccyfsTuTMJTN9FE8Cnf7xmtVallr9iK3R5</recordid><startdate>19860728</startdate><enddate>19860728</enddate><creator>ECCLES, A. J</creator><creator>VAN DEN BERG, J. A</creator><creator>BROWN, A</creator><creator>VICKERMAN, J. C</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19860728</creationdate><title>Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials</title><author>ECCLES, A. J ; VAN DEN BERG, J. A ; BROWN, A ; VICKERMAN, J. C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-b97c2dce2cb9ed84628402b1d17e5b5d6bb54cebfec7e07e100e7e8a2aea33933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>ARGON</topic><topic>ARGON IONS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>ATOM COLLISIONS</topic><topic>CHALCOGENIDES</topic><topic>CHARGED PARTICLES</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>COLLISIONS</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>ELEMENTS</topic><topic>Exact sciences and technology</topic><topic>FLUIDS</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>GASES</topic><topic>GLASS</topic><topic>GOLD</topic><topic>Impact phenomena (including electron spectra and sputtering)</topic><topic>ION COLLISIONS</topic><topic>IONS</topic><topic>METALS</topic><topic>NONMETALS</topic><topic>Other electron-impact emission phenomena</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RARE GASES</topic><topic>REFRACTORY METAL COMPOUNDS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SPUTTERING</topic><topic>TANTALUM COMPOUNDS</topic><topic>TANTALUM OXIDES</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><topic>TRANSITION ELEMENTS 640301 -- Atomic, Molecular & Chemical Physics-- Beams & their Reactions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ECCLES, A. J</creatorcontrib><creatorcontrib>VAN DEN BERG, J. A</creatorcontrib><creatorcontrib>BROWN, A</creatorcontrib><creatorcontrib>VICKERMAN, J. C</creatorcontrib><creatorcontrib>Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ECCLES, A. J</au><au>VAN DEN BERG, J. A</au><au>BROWN, A</au><au>VICKERMAN, J. C</au><aucorp>Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, United Kingdom</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1986-07-28</date><risdate>1986</risdate><volume>49</volume><issue>4</issue><spage>188</spage><epage>190</epage><pages>188-190</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster-scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low-energy ion bombardment.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.97165</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1986-07, Vol.49 (4), p.188-190 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_97165 |
| source | AIP Digital Archive |
| subjects | ARGON ARGON IONS ARSENIC COMPOUNDS ARSENIDES ATOM COLLISIONS CHALCOGENIDES CHARGED PARTICLES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COLLISIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena ELEMENTS Exact sciences and technology FLUIDS GALLIUM ARSENIDES GALLIUM COMPOUNDS GASES GLASS GOLD Impact phenomena (including electron spectra and sputtering) ION COLLISIONS IONS METALS NONMETALS Other electron-impact emission phenomena OXIDES OXYGEN COMPOUNDS Physics PNICTIDES RARE GASES REFRACTORY METAL COMPOUNDS SEMIMETALS SILICON SPUTTERING TANTALUM COMPOUNDS TANTALUM OXIDES TRANSITION ELEMENT COMPOUNDS TRANSITION ELEMENTS 640301 -- Atomic, Molecular & Chemical Physics-- Beams & their Reactions |
| title | Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T18%3A34%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evidence%20of%20a%20charge%20induced%20contribution%20to%20the%20sputtering%20yield%20of%20insulating%20and%20semiconducting%20materials&rft.jtitle=Appl.%20Phys.%20Lett.;%20(United%20States)&rft.au=ECCLES,%20A.%20J&rft.aucorp=Department%20of%20Chemistry,%20University%20of%20Manchester%20Institute%20of%20Science%20and%20Technology,%20P.O.%20Box%2088,%20Manchester%20M60%201QD,%20United%20Kingdom&rft.date=1986-07-28&rft.volume=49&rft.issue=4&rft.spage=188&rft.epage=190&rft.pages=188-190&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.97165&rft_dat=%3Cpascalfrancis_osti_%3E8087547%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |