Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating {100} oriented GaAs and GaSb la...

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Veröffentlicht in:	Applied physics letters 1986-06, Vol.48 (23), p.1603-1605
Hauptverfasser:	JEN, H. R, CHERNG, M. J, STRINGFELLOW, G. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96830