Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

In many instances the intrinsic photoluminescence at low temperatures of (Al,Ga)As/GaAs single quantum well structures grown by molecular beam epitaxy is weak and broad, unlike the case for most multiple quantum well structures. This is believed to be due to the microscopic roughness of the first Ga...

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Veröffentlicht in:	Applied physics letters 1986-04, Vol.48 (14), p.940-942
Hauptverfasser:	TSUI, R. K, KRAMER, G. D, CURLESS, J. A, PEFFLEY, M. S
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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