Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy

We analyze in this letter the Raman scattering spectra on several GaAs/AlAs short period superlattices grown by molecular beam epitaxy with different substrate temperatures and different doping concentrations. The frequency and Raman intensity of both folded acoustical and confined optical phonons,...

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Veröffentlicht in:	Applied physics letters 1985-08, Vol.47 (3), p.301-303
Hauptverfasser:	JUSSERAND, B, ALEXANDRE, F, PAQUET, D, LE ROUX, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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