Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
We analyze in this letter the Raman scattering spectra on several GaAs/AlAs short period superlattices grown by molecular beam epitaxy with different substrate temperatures and different doping concentrations. The frequency and Raman intensity of both folded acoustical and confined optical phonons,...
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| Veröffentlicht in: | Applied physics letters 1985-08, Vol.47 (3), p.301-303 |
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| container_title | Applied physics letters |
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| creator | JUSSERAND, B ALEXANDRE, F PAQUET, D LE ROUX, G |
| description | We analyze in this letter the Raman scattering spectra on several GaAs/AlAs short period superlattices grown by molecular beam epitaxy with different substrate temperatures and different doping concentrations. The frequency and Raman intensity of both folded acoustical and confined optical phonons, which are observed in all samples, are clearly related to the substrate temperature. These variations: (i) decreasing intensity of the folded acoustical modes, (ii) frequency shift of the optical modes confined in GaAs, are successfully analyzed in terms of interface broadening. A quantitative estimation of the interface widths is obtained and analyzed. |
| doi_str_mv | 10.1063/1.96199 |
| format | Article |
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The frequency and Raman intensity of both folded acoustical and confined optical phonons, which are observed in all samples, are clearly related to the substrate temperature. These variations: (i) decreasing intensity of the folded acoustical modes, (ii) frequency shift of the optical modes confined in GaAs, are successfully analyzed in terms of interface broadening. A quantitative estimation of the interface widths is obtained and analyzed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96199</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Interfaces ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics letters, 1985-08, Vol.47 (3), p.301-303</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c233t-9480b1d8f05b0a94c78dc333335ae72df038bad4269c1887ff1d5dfd1aa3daa83</citedby><cites>FETCH-LOGICAL-c233t-9480b1d8f05b0a94c78dc333335ae72df038bad4269c1887ff1d5dfd1aa3daa83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8562879$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JUSSERAND, B</creatorcontrib><creatorcontrib>ALEXANDRE, F</creatorcontrib><creatorcontrib>PAQUET, D</creatorcontrib><creatorcontrib>LE ROUX, G</creatorcontrib><title>Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy</title><title>Applied physics letters</title><description>We analyze in this letter the Raman scattering spectra on several GaAs/AlAs short period superlattices grown by molecular beam epitaxy with different substrate temperatures and different doping concentrations. The frequency and Raman intensity of both folded acoustical and confined optical phonons, which are observed in all samples, are clearly related to the substrate temperature. These variations: (i) decreasing intensity of the folded acoustical modes, (ii) frequency shift of the optical modes confined in GaAs, are successfully analyzed in terms of interface broadening. A quantitative estimation of the interface widths is obtained and analyzed.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JUSSERAND, B</creatorcontrib><creatorcontrib>ALEXANDRE, F</creatorcontrib><creatorcontrib>PAQUET, D</creatorcontrib><creatorcontrib>LE ROUX, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JUSSERAND, B</au><au>ALEXANDRE, F</au><au>PAQUET, D</au><au>LE ROUX, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1985-08-01</date><risdate>1985</risdate><volume>47</volume><issue>3</issue><spage>301</spage><epage>303</epage><pages>301-303</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We analyze in this letter the Raman scattering spectra on several GaAs/AlAs short period superlattices grown by molecular beam epitaxy with different substrate temperatures and different doping concentrations. The frequency and Raman intensity of both folded acoustical and confined optical phonons, which are observed in all samples, are clearly related to the substrate temperature. These variations: (i) decreasing intensity of the folded acoustical modes, (ii) frequency shift of the optical modes confined in GaAs, are successfully analyzed in terms of interface broadening. A quantitative estimation of the interface widths is obtained and analyzed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96199</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1985-08, Vol.47 (3), p.301-303 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_96199 |
| source | AIP Digital Archive |
| subjects | Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy |
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