12.5-GHz direct modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers

A small-signal modulation bandwidth of 12.5 GHz is reported for vapor phase regrown 1.3-μm InGaAsP buried heterostructure (BH) lasers operated at a bias optical power of only 6.9 mW/facet. The bandwidth per square root of bias optical power is a factor of 1.6 higher than previous best results. In ad...

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Veröffentlicht in:	Applied physics letters 1985-01, Vol.46 (4), p.344-346
Hauptverfasser:	SU, C. B, LANZISERA, V, POWAZINIK, W, MELAND, E, OLSHANKY, R, LAUER, R. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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