Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys

We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more...

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Veröffentlicht in:	Applied physics letters 1984-01, Vol.45 (1), p.50-51
Hauptverfasser:	GUHA, S, HUANG, C.-Y, HUDGENS, S. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics
Online-Zugang:	Volltext
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