Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys
We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more...
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| Veröffentlicht in: | Applied physics letters 1984-01, Vol.45 (1), p.50-51 |
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| container_title | Applied physics letters |
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| creator | GUHA, S HUANG, C.-Y HUDGENS, S. J |
| description | We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light-induced effect. |
| doi_str_mv | 10.1063/1.95001 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_95001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8990403</sourcerecordid><originalsourceid>FETCH-LOGICAL-c252t-208c69b01f5b7486839d23164937ca5916f1b5b994708bdf03b60e63db5a6b9c3</originalsourceid><addsrcrecordid>eNo9kM1KAzEYRYMoWKv4ClkIrka_bzLJTJal-AcFN3U95LcTmSYlmQp9e6sVV5d7OdzFIeQW4QFBsEd8kBwAz8gMoW0rhtidkxkAsEpIjpfkqpTPY-U1YzOyXsTo1Bjihmo3qK-QMk2ejmEzTFWIdm-cpdZ5Z6ZCQ6TDwea0cVFNx11tU94NaV9oCWMwKVI1julQrsmFV2NxN385Jx_PT-vla7V6f3lbLlaVqXk9VTV0RkgN6Llum050TNqaoWgka43iEoVHzbWUTQudth6YFuAEs5oroaVhc3J_-jU5lZKd73c5bFU-9Aj9j4we-18ZR_LuRO5UMWr0WUUTyj_eSQkNMPYNj_5d3w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys</title><source>AIP Digital Archive</source><creator>GUHA, S ; HUANG, C.-Y ; HUDGENS, S. J</creator><creatorcontrib>GUHA, S ; HUANG, C.-Y ; HUDGENS, S. J</creatorcontrib><description>We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light-induced effect.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.95001</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic transport in condensed matter ; Exact sciences and technology ; Photoconduction and photovoltaic effects; photodielectric effects ; Physics</subject><ispartof>Applied physics letters, 1984-01, Vol.45 (1), p.50-51</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c252t-208c69b01f5b7486839d23164937ca5916f1b5b994708bdf03b60e63db5a6b9c3</citedby><cites>FETCH-LOGICAL-c252t-208c69b01f5b7486839d23164937ca5916f1b5b994708bdf03b60e63db5a6b9c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8990403$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>GUHA, S</creatorcontrib><creatorcontrib>HUANG, C.-Y</creatorcontrib><creatorcontrib>HUDGENS, S. J</creatorcontrib><title>Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys</title><title>Applied physics letters</title><description>We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light-induced effect.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KAzEYRYMoWKv4ClkIrka_bzLJTJal-AcFN3U95LcTmSYlmQp9e6sVV5d7OdzFIeQW4QFBsEd8kBwAz8gMoW0rhtidkxkAsEpIjpfkqpTPY-U1YzOyXsTo1Bjihmo3qK-QMk2ejmEzTFWIdm-cpdZ5Z6ZCQ6TDwea0cVFNx11tU94NaV9oCWMwKVI1julQrsmFV2NxN385Jx_PT-vla7V6f3lbLlaVqXk9VTV0RkgN6Llum050TNqaoWgka43iEoVHzbWUTQudth6YFuAEs5oroaVhc3J_-jU5lZKd73c5bFU-9Aj9j4we-18ZR_LuRO5UMWr0WUUTyj_eSQkNMPYNj_5d3w</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>GUHA, S</creator><creator>HUANG, C.-Y</creator><creator>HUDGENS, S. J</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19840101</creationdate><title>Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys</title><author>GUHA, S ; HUANG, C.-Y ; HUDGENS, S. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-208c69b01f5b7486839d23164937ca5916f1b5b994708bdf03b60e63db5a6b9c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GUHA, S</creatorcontrib><creatorcontrib>HUANG, C.-Y</creatorcontrib><creatorcontrib>HUDGENS, S. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>GUHA, S</au><au>HUANG, C.-Y</au><au>HUDGENS, S. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys</atitle><jtitle>Applied physics letters</jtitle><date>1984-01-01</date><risdate>1984</risdate><volume>45</volume><issue>1</issue><spage>50</spage><epage>51</epage><pages>50-51</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have studied the annealing behavior of light-induced changes in room-temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light-induced effect.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.95001</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1984-01, Vol.45 (1), p.50-51 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_95001 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics |
| title | Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys |
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