Trap generation and electron detrapping in SiO2 during high-field stressing of metal-oxide-semiconductor structures

Direct evidence for electron trap generation during high-field stressing of thermally grown SiO2 layers is obtained using avalanche injection followed by internal photoemission measurements on Al-gate metal-oxide-semiconductor structures. Avalanche injection is used to fill oxide traps with a minimu...

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Veröffentlicht in:	Applied physics letters 1984-01, Vol.44 (2), p.202-204
Hauptverfasser:	HEYNS, M. M, DE KEERSMAECKER, R. F, HILLEN, M. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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