Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitax...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1984-06, Vol.44 (12), p.1149-1151
1. Verfasser:	WANG, W. I
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1151
container_issue	12
container_start_page	1149
container_title	Applied physics letters
container_volume	44
creator	WANG, W. I
description	We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.
doi_str_mv	10.1063/1.94673
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_94673</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8994165</sourcerecordid><originalsourceid>FETCH-LOGICAL-c318t-c9ab0549c44911f7838c0788fa84b4fa6c8912239a5384fd517d16216dea3a0b3</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRS0EEqUgfsELJGCR4sk4jr2sqlKQiljw2EYTx4agvGQHAX9PH4jVzNx7NIvD2DmIGQiFNzAzUuV4wCYg8jxBAH3IJkIITJTJ4JidxPixObMUccJeH_rG2c-GAi8dtdwN9UjfNTX8LfRf4zunruItjS5ssyH0gwtj7SLvPV_RPO76ebNb-44_1fwKhLg-ZUeemujO_uaUvdwunxd3yfpxdb-YrxOLoMfEGipFJo2V0gD4XKO2Itfak5al9KSsNpCmaChDLX2VQV6BSkFVjpBEiVN2uf9rQx9jcL4YQt1S-ClAFFsdBRQ7HRvyYk8OFC01PlBn6_iPa2MkqAx_AYQuXBU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)</title><source>AIP Digital Archive</source><creator>WANG, W. I</creator><creatorcontrib>WANG, W. I</creatorcontrib><description>We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.94673</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1984-06, Vol.44 (12), p.1149-1151</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c318t-c9ab0549c44911f7838c0788fa84b4fa6c8912239a5384fd517d16216dea3a0b3</citedby><cites>FETCH-LOGICAL-c318t-c9ab0549c44911f7838c0788fa84b4fa6c8912239a5384fd517d16216dea3a0b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8994165$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WANG, W. I</creatorcontrib><title>Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)</title><title>Applied physics letters</title><description>We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqUgfsELJGCR4sk4jr2sqlKQiljw2EYTx4agvGQHAX9PH4jVzNx7NIvD2DmIGQiFNzAzUuV4wCYg8jxBAH3IJkIITJTJ4JidxPixObMUccJeH_rG2c-GAi8dtdwN9UjfNTX8LfRf4zunruItjS5ssyH0gwtj7SLvPV_RPO76ebNb-44_1fwKhLg-ZUeemujO_uaUvdwunxd3yfpxdb-YrxOLoMfEGipFJo2V0gD4XKO2Itfak5al9KSsNpCmaChDLX2VQV6BSkFVjpBEiVN2uf9rQx9jcL4YQt1S-ClAFFsdBRQ7HRvyYk8OFC01PlBn6_iPa2MkqAx_AYQuXBU</recordid><startdate>19840615</startdate><enddate>19840615</enddate><creator>WANG, W. I</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19840615</creationdate><title>Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)</title><author>WANG, W. I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-c9ab0549c44911f7838c0788fa84b4fa6c8912239a5384fd517d16216dea3a0b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WANG, W. I</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WANG, W. I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)</atitle><jtitle>Applied physics letters</jtitle><date>1984-06-15</date><risdate>1984</risdate><volume>44</volume><issue>12</issue><spage>1149</spage><epage>1151</epage><pages>1149-1151</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.94673</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 1984-06, Vol.44 (12), p.1149-1151
issn	0003-6951 1077-3118
language	eng
recordid	cdi_crossref_primary_10_1063_1_94673
source	AIP Digital Archive
subjects	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
title	Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T02%3A45%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Molecular%20beam%20epitaxial%20growth%20and%20material%20properties%20of%20GaAs%20and%20AlGaAs%20on%20Si%20(100)&rft.jtitle=Applied%20physics%20letters&rft.au=WANG,%20W.%20I&rft.date=1984-06-15&rft.volume=44&rft.issue=12&rft.spage=1149&rft.epage=1151&rft.pages=1149-1151&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.94673&rft_dat=%3Cpascalfrancis_cross%3E8994165%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true