Comparison of XeF2 and F-atom reactions with Si and SiO2

Silicon gasification by XeF2 is compared with F-atom etching under conditions typical of those used in plasma etching. Temperatures ranged from −17 to 360 °C and XeF2 pressures were between 0.05 and 2 Torr. Silicon etching by XeF2 shows a sharply different etch rate/temperature dependence than the S...

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Veröffentlicht in:	Applied physics letters 1984-06, Vol.44 (12), p.1129-1131
Hauptverfasser:	IBBOTSON, D. E, FLAMM, D. L, MUCHA, J. A, DONNELLY, V. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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