Influence of helium I layer formation on the copper-helium-4 Kapitza resistance at helium II bath temperatures

The transient Kapitza resistance between copper and helium II caused by a step input in power has been studied near 2 K. The resistance is affected by formation of a helium I layer whose thickness, of the order 10−4–10−5 cm, is evaluated as a function of the heat flux density.

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Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1983-09, Vol.43 (5), p.451-453
Hauptverfasser:	KIM, Y. I, LI-HE LIN, CHUANG, C, FREDERKING, T. H. K
Format:	Artikel
Sprache:	eng
Schlagworte:	640450 - Fluid Physics- Superfluidity CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: structure, mechanical and thermal properties COPPER ELEMENTS EVEN-EVEN NUCLEI Exact sciences and technology FLUIDS HELIUM 4 HELIUM I HELIUM II HELIUM ISOTOPES INTERFACES ISOTOPES KAPITZA RESISTANCE LIGHT NUCLEI METALS NUCLEI Other topics in quantum fluids and solids liquid and solid helium PHASE TRANSFORMATIONS Physics QUANTUM FLUIDS Quantum fluids and solids liquid and solid helium STABLE ISOTOPES THERMAL BOUNDARY RESISTANCE TIME DEPENDENCE TRANSITION ELEMENTS ULTRALOW TEMPERATURE
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Beschreibung
Zusammenfassung:	The transient Kapitza resistance between copper and helium II caused by a step input in power has been studied near 2 K. The resistance is affected by formation of a helium I layer whose thickness, of the order 10−4–10−5 cm, is evaluated as a function of the heat flux density.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.94385