Metal/tunnel-barrier/semiconductor/tunnel-barrier/metal fast photodetector
A novel symmetric metal/tunnel-barrier/silicon/tunnel-barrier/metal planar junction fast photodetector is described. The device exhibits an observed pulse width of about 45-ps full width at half-maximum in response to synchronously pumped mode-locked rhodamine 6G dye laser pulses of
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Veröffentlicht in: | Applied physics letters 1982-02, Vol.40 (3), p.255-257 |
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container_title | Applied physics letters |
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creator | Thaniyavarn, Suwat Gustafson, T. K. |
description | A novel symmetric metal/tunnel-barrier/silicon/tunnel-barrier/metal planar junction fast photodetector is described. The device exhibits an observed pulse width of about 45-ps full width at half-maximum in response to synchronously pumped mode-locked rhodamine 6G dye laser pulses of |
doi_str_mv | 10.1063/1.93065 |
format | Article |
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The particular detector described here has a sensitivity of order 1/2 mA/mW in response to the cw HeNe laser wavelength, and a dark current below 1 nA at <20-V bias.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.93065</identifier><language>eng</language><ispartof>Applied physics letters, 1982-02, Vol.40 (3), p.255-257</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-da2f13fb8275319c9b584407fd6efae5689f546228de167b6db936a9f735398e3</citedby><cites>FETCH-LOGICAL-c291t-da2f13fb8275319c9b584407fd6efae5689f546228de167b6db936a9f735398e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Thaniyavarn, Suwat</creatorcontrib><creatorcontrib>Gustafson, T. K.</creatorcontrib><title>Metal/tunnel-barrier/semiconductor/tunnel-barrier/metal fast photodetector</title><title>Applied physics letters</title><description>A novel symmetric metal/tunnel-barrier/silicon/tunnel-barrier/metal planar junction fast photodetector is described. The device exhibits an observed pulse width of about 45-ps full width at half-maximum in response to synchronously pumped mode-locked rhodamine 6G dye laser pulses of <10-ps duration at 6000-Å wavelength. Detection sensitivity and dark current level are uniquely controlled by adjusting the tunnel-barrier thicknesses, without affecting the response speed. 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K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metal/tunnel-barrier/semiconductor/tunnel-barrier/metal fast photodetector</atitle><jtitle>Applied physics letters</jtitle><date>1982-02-01</date><risdate>1982</risdate><volume>40</volume><issue>3</issue><spage>255</spage><epage>257</epage><pages>255-257</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A novel symmetric metal/tunnel-barrier/silicon/tunnel-barrier/metal planar junction fast photodetector is described. The device exhibits an observed pulse width of about 45-ps full width at half-maximum in response to synchronously pumped mode-locked rhodamine 6G dye laser pulses of <10-ps duration at 6000-Å wavelength. Detection sensitivity and dark current level are uniquely controlled by adjusting the tunnel-barrier thicknesses, without affecting the response speed. The particular detector described here has a sensitivity of order 1/2 mA/mW in response to the cw HeNe laser wavelength, and a dark current below 1 nA at <20-V bias.</abstract><doi>10.1063/1.93065</doi><tpages>3</tpages></addata></record> |
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language | eng |
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title | Metal/tunnel-barrier/semiconductor/tunnel-barrier/metal fast photodetector |
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