Interface recombination and carrier confinement at a GaAs/Ga x In1− x P double heterojunction studied by picosecond population modulation spectroscopy

Sensitive picosecond excite-probe modulation methods have been applied to study electron-hole confinement and interface lifetime in a molecular beam epitaxy (MBE) grown n-type GaxIn1−xP/ GaAs/GaxIn1−xP double heterojunction. Time-varying transmission spectra at 77 K have been examined near the E0+Δ0...

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Veröffentlicht in:	Applied physics letters 1982-05, Vol.40 (10), p.885-887
Hauptverfasser:	Harris, J. H., Sugai, S., Nurmikko, A. V.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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