n -channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2

n-channel deep-depletion mode metal-oxide-semiconductor field-effect transistors (MOSFET’s) have been fabricated in Si films prepared by zone-melting recrystallization of chemical-vapor deposited (CVD) polycrystalline Si deposited on SiO2-coated Si substrates. The transistors exhibit surface electron mobility in the range of 600–700 cm2/Vs, comparable to values for devices fabricated in single-crystal Si. Measurements of electron mobility as a function of gate bias voltage indicate that the mobility is nearly constant throughout the depth of the recrystallized Si films. Mobility of 650–700 cm2/Vs at the lower Si-SiO2 interface and subthreshold source-drain leakage current of a few pA/μm (channel width) have been measured.