Saturation velocity determination for In0.53Ga0.47As field-effect transistors

The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1981-05, Vol.38 (10), p.817-819
Hauptverfasser: Bandy, S., Nishimoto, C., Hyder, S., Hooper, C.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a factor of 2 higher saturated velocity for InGaAs in comparison to GaAs when used as a FET material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92143