Saturation velocity determination for In0.53Ga0.47As field-effect transistors
The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a...
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Veröffentlicht in: | Applied physics letters 1981-05, Vol.38 (10), p.817-819 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a factor of 2 higher saturated velocity for InGaAs in comparison to GaAs when used as a FET material. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.92143 |