Viscous flow of thermal SiO2
Wafer curvature measurements from 25 to 1075 °C are used to demonstrate viscous flow of thermally grown SiO2 at temperatures as low as 960 °C. Both O2- and steam-grown oxides are examined and found to have viscosities similar to synthetic fused silica. It is recommended that high-temperature Si devi...
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| Veröffentlicht in: | Applied physics letters 1977-03, Vol.30 (6), p.290-293 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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