Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress
Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting considerable attention over the last two decades as alternatives to a-Si due to their superior electrical performance coupled with optical transparency to visible light and mechanical flexibility. They have become...
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| Veröffentlicht in: | Applied physics letters 2020-04, Vol.116 (16) |
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| container_title | Applied physics letters |
| container_volume | 116 |
| creator | Paxinos, Kosta Antoniou, Giorgos Afouxenidis, Dimitrios Mohamed, Ahmed Dikko, Umar Tsitsimpelis, Ioannis Milne, William I. Nathan, Arokia Adamopoulos, George |
| description | Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting considerable attention over the last two decades as alternatives to a-Si due to their superior electrical performance coupled with optical transparency to visible light and mechanical flexibility. They have become highly desirable for applications in backplane electronics for active-matrix organic light-emitting diodes including flexible displays and other newly emerging areas. Indeed, the performance of oxide-based TFTs, i.e., the carrier mobility, exceeds that of amorphous a-Si-based TFTs, and their stability characteristics exceed those of organic semiconductors. |
| doi_str_mv | 10.1063/1.5142699 |
| format | Article |
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Indeed, the performance of oxide-based TFTs, i.e., the carrier mobility, exceeds that of amorphous a-Si-based TFTs, and their stability characteristics exceed those of organic semiconductors.</description><subject>Applied physics</subject><subject>Backplanes</subject><subject>Carrier mobility</subject><subject>Indium oxides</subject><subject>Low voltage</subject><subject>Metal oxide semiconductors</subject><subject>Organic light emitting diodes</subject><subject>Organic semiconductors</subject><subject>Photovoltaic cells</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqdkEFv1DAQhS1EJZbCgX9giRNIWWyPk9rcqqq0lVbqhYpjNHGc4pK1F4-zqP-Cn4y3W4l7T6M3-uaN3mPsgxRrKTr4Itet1Kqz9hVbSXF21oCU5jVbCSGg6Wwr37C3RA9Vtgpgxf5u0h--T3PBe8_LzxD5FOYtLxkjBSopEx-Q_MhT5JTmpYQUm11OztNhexPVLXz9sebnPPst5l84zI-cSh2ek98Gl-K4uOrDlzj6zKO_xxL2nmMc-S5ReBJDQKpXuZq-YycTzuTfP89Tdvft8vvFdbO5vbq5ON80DlpTGquNNQKhbe00op4Gr1BJ5axtnVMStTed84DGAKrBAoxam24aJpBao1Zwyj4efWuY34un0j-kJcf6sldgtQajpKjUpyPlciLKfup3OdScj70U_aHwXvbPhVf285ElFwoeinoZvE_5P9jvxgn-ASfUkNM</recordid><startdate>20200420</startdate><enddate>20200420</enddate><creator>Paxinos, Kosta</creator><creator>Antoniou, Giorgos</creator><creator>Afouxenidis, Dimitrios</creator><creator>Mohamed, Ahmed</creator><creator>Dikko, Umar</creator><creator>Tsitsimpelis, Ioannis</creator><creator>Milne, William I.</creator><creator>Nathan, Arokia</creator><creator>Adamopoulos, George</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2535-007X</orcidid></search><sort><creationdate>20200420</creationdate><title>Low voltage thin film transistors based on solution-processed In2O3:W. 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A remarkably stable semiconductor under negative and positive bias stress</atitle><jtitle>Applied physics letters</jtitle><date>2020-04-20</date><risdate>2020</risdate><volume>116</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting considerable attention over the last two decades as alternatives to a-Si due to their superior electrical performance coupled with optical transparency to visible light and mechanical flexibility. They have become highly desirable for applications in backplane electronics for active-matrix organic light-emitting diodes including flexible displays and other newly emerging areas. 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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2020-04, Vol.116 (16) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_5142699 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Backplanes Carrier mobility Indium oxides Low voltage Metal oxide semiconductors Organic light emitting diodes Organic semiconductors Photovoltaic cells Semiconductor devices Semiconductors Thin film transistors Thin films Transistors |
| title | Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress |
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