Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

The relaxation of electrons bound to bismuth donors in silicon and the effect of uniaxial stress have been studied using the time-resolved single color pump-probe technique. In unstressed Si:Bi, an excited 2p0 donor state is resonantly coupled with the donor 1s(A1) ground state via an intervalley f-...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2020-01, Vol.127 (3)
Hauptverfasser:	Zhukavin, R. Kh, Pavlov, S. G., Stavrias, N., Saeedi, K., Kovalevsky, K. A., Phillips, P. J., Tsyplenkov, V. V., Abrosimov, N. V., Riemann, H., Deβmann, N., Hübers, H.-W., Shastin, V. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bismuth Electrons Energy gap Excitation Ground state Phonons Silicon Stress relaxation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!