Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions
This work reports the development of perpendicular magnetic tunnel junctions, based on a multilayered stack of [Tb/Co] nanolayers, in which the magnetization can be reliably toggled using a single optical pulse. The helicity-independent single-shot switching of the magnetization in the Tb/Co multila...
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| Veröffentlicht in: | AIP advances 2019-12, Vol.9 (12), p.125328-125328-5 |
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| creator | Avilés-Félix, L. Álvaro-Gómez, L. Li, G. Davies, C. S. Olivier, A. Rubio-Roy, M. Auffret, S. Kirilyuk, A. Kimel, A. V. Rasing, Th Buda-Prejbeanu, L. D. Sousa, R. C. Dieny, B. Prejbeanu, I. L. |
| description | This work reports the development of perpendicular magnetic tunnel junctions, based on a multilayered stack of [Tb/Co] nanolayers, in which the magnetization can be reliably toggled using a single optical pulse. The helicity-independent single-shot switching of the magnetization in the Tb/Co multilayered stack was achieved using either 60 fs-long or 5 ps laser pulses with incident fluences down to 4.7 mJ/cm2. The magnetic switching was achieved for a Co-rich composition window of the multilayer corresponding to layer thickness ratios tCo/tTb between 1.3-1.5. This was confirmed for the multilayer alone as well as for the multilayer coupled to aCoFeB electrode, with a structure consisting of CoFeB/Ta/[Tb/Co]N. The optical switching is preserved even after annealing at 250°C in magnetic tunnel junctions (MTJ) electrodes, exhibiting a tunnel magnetoresistance (TMR) of 41% and RxA value of 150 Ωμm after its integration, measured on unpatterned MTJ stacks. These results represent the first step towards the development of hybrid spintronic photonic systems with fJ switching energies. |
| doi_str_mv | 10.1063/1.5129821 |
| format | Article |
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S. ; Olivier, A. ; Rubio-Roy, M. ; Auffret, S. ; Kirilyuk, A. ; Kimel, A. V. ; Rasing, Th ; Buda-Prejbeanu, L. D. ; Sousa, R. C. ; Dieny, B. ; Prejbeanu, I. L.</creator><creatorcontrib>Avilés-Félix, L. ; Álvaro-Gómez, L. ; Li, G. ; Davies, C. S. ; Olivier, A. ; Rubio-Roy, M. ; Auffret, S. ; Kirilyuk, A. ; Kimel, A. V. ; Rasing, Th ; Buda-Prejbeanu, L. D. ; Sousa, R. C. ; Dieny, B. ; Prejbeanu, I. L.</creatorcontrib><description>This work reports the development of perpendicular magnetic tunnel junctions, based on a multilayered stack of [Tb/Co] nanolayers, in which the magnetization can be reliably toggled using a single optical pulse. The helicity-independent single-shot switching of the magnetization in the Tb/Co multilayered stack was achieved using either 60 fs-long or 5 ps laser pulses with incident fluences down to 4.7 mJ/cm2. The magnetic switching was achieved for a Co-rich composition window of the multilayer corresponding to layer thickness ratios tCo/tTb between 1.3-1.5. This was confirmed for the multilayer alone as well as for the multilayer coupled to aCoFeB electrode, with a structure consisting of CoFeB/Ta/[Tb/Co]N. The optical switching is preserved even after annealing at 250°C in magnetic tunnel junctions (MTJ) electrodes, exhibiting a tunnel magnetoresistance (TMR) of 41% and RxA value of 150 Ωμm after its integration, measured on unpatterned MTJ stacks. These results represent the first step towards the development of hybrid spintronic photonic systems with fJ switching energies.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5129821</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Computer memory ; Condensed Matter ; Electrodes ; Helicity ; Hybrid systems ; Magnetic switching ; Magnetization ; Magnetoresistance ; Magnetoresistivity ; Materials Science ; Multilayers ; Optical switching ; Photonics ; Physics ; Random access memory ; Thickness ; Tunnel junctions ; Tunnel magnetoresistance</subject><ispartof>AIP advances, 2019-12, Vol.9 (12), p.125328-125328-5</ispartof><rights>Author(s)</rights><rights>2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c528t-9ebe1b536a6c0c4e0a9d0f6c08a39bc1373b1c2b692687d737e83d18d0ad324c3</citedby><cites>FETCH-LOGICAL-c528t-9ebe1b536a6c0c4e0a9d0f6c08a39bc1373b1c2b692687d737e83d18d0ad324c3</cites><orcidid>0000-0002-0575-5301 ; 0000-0003-1479-9872 ; 0000-0002-4906-4377 ; 0000-0003-3285-9891 ; 0000-0001-8899-3518 ; 0000-0001-9665-5455 ; 0000-0001-8903-3359 ; 0000-0002-6105-151X ; 0000-0002-4552-3150 ; 0000-0001-6577-032X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,860,881,2095,27903,27904</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02428524$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Avilés-Félix, L.</creatorcontrib><creatorcontrib>Álvaro-Gómez, L.</creatorcontrib><creatorcontrib>Li, G.</creatorcontrib><creatorcontrib>Davies, C. S.</creatorcontrib><creatorcontrib>Olivier, A.</creatorcontrib><creatorcontrib>Rubio-Roy, M.</creatorcontrib><creatorcontrib>Auffret, S.</creatorcontrib><creatorcontrib>Kirilyuk, A.</creatorcontrib><creatorcontrib>Kimel, A. V.</creatorcontrib><creatorcontrib>Rasing, Th</creatorcontrib><creatorcontrib>Buda-Prejbeanu, L. D.</creatorcontrib><creatorcontrib>Sousa, R. C.</creatorcontrib><creatorcontrib>Dieny, B.</creatorcontrib><creatorcontrib>Prejbeanu, I. L.</creatorcontrib><title>Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions</title><title>AIP advances</title><description>This work reports the development of perpendicular magnetic tunnel junctions, based on a multilayered stack of [Tb/Co] nanolayers, in which the magnetization can be reliably toggled using a single optical pulse. The helicity-independent single-shot switching of the magnetization in the Tb/Co multilayered stack was achieved using either 60 fs-long or 5 ps laser pulses with incident fluences down to 4.7 mJ/cm2. The magnetic switching was achieved for a Co-rich composition window of the multilayer corresponding to layer thickness ratios tCo/tTb between 1.3-1.5. This was confirmed for the multilayer alone as well as for the multilayer coupled to aCoFeB electrode, with a structure consisting of CoFeB/Ta/[Tb/Co]N. The optical switching is preserved even after annealing at 250°C in magnetic tunnel junctions (MTJ) electrodes, exhibiting a tunnel magnetoresistance (TMR) of 41% and RxA value of 150 Ωμm after its integration, measured on unpatterned MTJ stacks. These results represent the first step towards the development of hybrid spintronic photonic systems with fJ switching energies.</description><subject>Computer memory</subject><subject>Condensed Matter</subject><subject>Electrodes</subject><subject>Helicity</subject><subject>Hybrid systems</subject><subject>Magnetic switching</subject><subject>Magnetization</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Materials Science</subject><subject>Multilayers</subject><subject>Optical switching</subject><subject>Photonics</subject><subject>Physics</subject><subject>Random access memory</subject><subject>Thickness</subject><subject>Tunnel junctions</subject><subject>Tunnel magnetoresistance</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkc1qGzEUhYfSQEOSRd5AkFULTvQ3GmkZTJsYDN2ka3H1M_YYeTSRNCl--8pxaNpttNHl6OPjitM01wTfEizYHbltCVWSkk_NOSWtXDBKxed_5i_NVc47XA9XBEt-3rjVWPwmQRniiGKPnszdMqL9HMoQ4OBTRr-Hsh3q21QGCyEcUK6J3YIJHk0-TX50g50DJLSHzegrhco8jj6g3TzaozdfNmc9hOyv3u6L5teP70_Lx8X658Nqeb9e2JbKslDeeGJaJkBYbLnHoBzu6yyBKWMJ65ghlhqhqJCd61jnJXNEOgyOUW7ZRbM6eV2EnZ7SsId00BEG_RrEtNGQ6oLB667HFKQiAM5wgYVxoJiCvpOCWy676vp6cm0h_Kd6vF_rY4Ypp7Kl_IVU9ubETik-zz4XvYtzGutXNWWsgnV1-m60KeacfP9XS7A-9qeJfuuvst9ObLZDeS3nY_BLTO-gnlzP_gDO6Kit</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Avilés-Félix, L.</creator><creator>Álvaro-Gómez, L.</creator><creator>Li, G.</creator><creator>Davies, C. S.</creator><creator>Olivier, A.</creator><creator>Rubio-Roy, M.</creator><creator>Auffret, S.</creator><creator>Kirilyuk, A.</creator><creator>Kimel, A. V.</creator><creator>Rasing, Th</creator><creator>Buda-Prejbeanu, L. D.</creator><creator>Sousa, R. C.</creator><creator>Dieny, B.</creator><creator>Prejbeanu, I. L.</creator><general>American Institute of Physics</general><general>American Institute of Physics- AIP Publishing LLC</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-0575-5301</orcidid><orcidid>https://orcid.org/0000-0003-1479-9872</orcidid><orcidid>https://orcid.org/0000-0002-4906-4377</orcidid><orcidid>https://orcid.org/0000-0003-3285-9891</orcidid><orcidid>https://orcid.org/0000-0001-8899-3518</orcidid><orcidid>https://orcid.org/0000-0001-9665-5455</orcidid><orcidid>https://orcid.org/0000-0001-8903-3359</orcidid><orcidid>https://orcid.org/0000-0002-6105-151X</orcidid><orcidid>https://orcid.org/0000-0002-4552-3150</orcidid><orcidid>https://orcid.org/0000-0001-6577-032X</orcidid></search><sort><creationdate>20191201</creationdate><title>Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions</title><author>Avilés-Félix, L. ; Álvaro-Gómez, L. ; Li, G. ; Davies, C. S. ; Olivier, A. ; Rubio-Roy, M. ; Auffret, S. ; Kirilyuk, A. ; Kimel, A. V. ; Rasing, Th ; Buda-Prejbeanu, L. D. ; Sousa, R. C. ; Dieny, B. ; Prejbeanu, I. 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L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions</atitle><jtitle>AIP advances</jtitle><date>2019-12-01</date><risdate>2019</risdate><volume>9</volume><issue>12</issue><spage>125328</spage><epage>125328-5</epage><pages>125328-125328-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>This work reports the development of perpendicular magnetic tunnel junctions, based on a multilayered stack of [Tb/Co] nanolayers, in which the magnetization can be reliably toggled using a single optical pulse. The helicity-independent single-shot switching of the magnetization in the Tb/Co multilayered stack was achieved using either 60 fs-long or 5 ps laser pulses with incident fluences down to 4.7 mJ/cm2. The magnetic switching was achieved for a Co-rich composition window of the multilayer corresponding to layer thickness ratios tCo/tTb between 1.3-1.5. This was confirmed for the multilayer alone as well as for the multilayer coupled to aCoFeB electrode, with a structure consisting of CoFeB/Ta/[Tb/Co]N. The optical switching is preserved even after annealing at 250°C in magnetic tunnel junctions (MTJ) electrodes, exhibiting a tunnel magnetoresistance (TMR) of 41% and RxA value of 150 Ωμm after its integration, measured on unpatterned MTJ stacks. These results represent the first step towards the development of hybrid spintronic photonic systems with fJ switching energies.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5129821</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-0575-5301</orcidid><orcidid>https://orcid.org/0000-0003-1479-9872</orcidid><orcidid>https://orcid.org/0000-0002-4906-4377</orcidid><orcidid>https://orcid.org/0000-0003-3285-9891</orcidid><orcidid>https://orcid.org/0000-0001-8899-3518</orcidid><orcidid>https://orcid.org/0000-0001-9665-5455</orcidid><orcidid>https://orcid.org/0000-0001-8903-3359</orcidid><orcidid>https://orcid.org/0000-0002-6105-151X</orcidid><orcidid>https://orcid.org/0000-0002-4552-3150</orcidid><orcidid>https://orcid.org/0000-0001-6577-032X</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Computer memory Condensed Matter Electrodes Helicity Hybrid systems Magnetic switching Magnetization Magnetoresistance Magnetoresistivity Materials Science Multilayers Optical switching Photonics Physics Random access memory Thickness Tunnel junctions Tunnel magnetoresistance |
| title | Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions |
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