Persistent and reversible electrostatic control of doping in graphene/hexagonal boron nitride heterostructures

Since its first application as a substrate for graphene field effect transistors (FETs), hexagonal boron nitride (hBN) has become a prominent component in two-dimensional (2D) material devices. In addition, hBN has been shown to host defects that can be manipulated to change the electronic propertie...

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Veröffentlicht in:	Journal of applied physics 2020-01, Vol.127 (4)
Hauptverfasser:	Quezada-Lopez, E. A., Joucken, F., Chen, H., Lara, A., Davenport, J. L., Hellier, K., Taniguchi, T., Watanabe, K., Carter, S., Ramirez, A. P., Velasco, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Boron nitride Defects Electric fields Electrical properties Field effect transistors Graphene Heterostructures MATERIALS SCIENCE Semiconductor devices Substrates Two dimensional materials
Online-Zugang:	Volltext
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