Large metal halide perovskite crystals for field-effect transistor applications

The material 2-phenylethylammonium tin iodide perovskite (C6H5C2H4NH3)2SnI4 [abbreviated as (PEA)2SnI4] has shown promising performance as a polycrystalline semiconductor for field-effect transistors (FETs). However, grain boundaries and structural disorder in polycrystalline films limit performance...

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Veröffentlicht in:	Applied physics letters 2019-09, Vol.115 (12)
Hauptverfasser:	Matsushima, Toshinori, Leyden, Matthew R., Fujihara, Takashi, Qin, Chuanjiang, Sandanayaka, Atula S. D., Adachi, Chihaya
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier transport Crystals Field effect transistors Grain boundaries Metal halides Perovskites Polycrystals Semiconductor devices Upper bounds
Online-Zugang:	Volltext
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