Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy

The success in the synthesis of wafer-size single-crystal graphene enables a tremendous breakthrough in the development of graphene-based devices. Understanding the growth mechanism is essential for the design of suitable substrates to meet the demand of various applications. Here, we investigate th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2019-08, Vol.126 (7)
Hauptverfasser: Zhu, Hailong, Cui, Fenwei, Zhang, Xuefu, Ma, Ni, Hu, Xudong, Di, Zengfeng, Xie, Xiaoming, Li, Ang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 7
container_start_page
container_title Journal of applied physics
container_volume 126
creator Zhu, Hailong
Cui, Fenwei
Zhang, Xuefu
Ma, Ni
Hu, Xudong
Di, Zengfeng
Xie, Xiaoming
Li, Ang
description The success in the synthesis of wafer-size single-crystal graphene enables a tremendous breakthrough in the development of graphene-based devices. Understanding the growth mechanism is essential for the design of suitable substrates to meet the demand of various applications. Here, we investigate the detailed growth process of the monolayer single-crystal graphene on Cu/Ni(111) and Ge(110) surfaces using scanning tunneling microscopy. The ( 3 × 3 ) R 30 ° surface structure on Cu/Ni(111) and 1 × 1 atomic structure on Ge(110) are found to match the graphene lattice along the armchair direction. These specific atomic arrangements dictate the quasiepitaxial nature of graphene growth on both substrates despite their apparent differences in native lattice geometry.
doi_str_mv 10.1063/1.5108699
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_5108699</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2274061930</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-5093bc45d413a4547ae0df60d0a636a737ff5597323e9830c6d9f7a49001ecd73</originalsourceid><addsrcrecordid>eNqdkEtLAzEUhYMoWKsL_0HAjRWmvZnMTJqlFK1C0YW6HtI86pRpZsxDGPzzprTg3tU9i--ee89B6JrAlEBFZ2RaEphXnJ-gURI8Y2UJp2gEkJNszhk_RxfebwEImVM-Qj9v0RkhNfbBRRmi0x53BvvGblqdSTf4IFq8caL_1FbjzuJFnL00t4SQCRZW4aVOGibYx3WyECHt-xBVoxVeD9hLYW3ywiFaq9u92jXSdV52_XCJzoxovb46zjH6eHx4Xzxlq9fl8-J-lUmas5CVwOlaFqUqCBVFWTChQZkKFIiKVoJRZkxZckZzqvmcgqwUN0wUPIXUUjE6RjcH3951X1H7UG-76Gw6Wec5K6AinEKiJgdq_5532tS9a3bCDTWBet9tTepjt4m9O7BeNkGEprP_g7879wfWvTL0F3aihyA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2274061930</pqid></control><display><type>article</type><title>Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Zhu, Hailong ; Cui, Fenwei ; Zhang, Xuefu ; Ma, Ni ; Hu, Xudong ; Di, Zengfeng ; Xie, Xiaoming ; Li, Ang</creator><creatorcontrib>Zhu, Hailong ; Cui, Fenwei ; Zhang, Xuefu ; Ma, Ni ; Hu, Xudong ; Di, Zengfeng ; Xie, Xiaoming ; Li, Ang</creatorcontrib><description>The success in the synthesis of wafer-size single-crystal graphene enables a tremendous breakthrough in the development of graphene-based devices. Understanding the growth mechanism is essential for the design of suitable substrates to meet the demand of various applications. Here, we investigate the detailed growth process of the monolayer single-crystal graphene on Cu/Ni(111) and Ge(110) surfaces using scanning tunneling microscopy. The ( 3 × 3 ) R 30 ° surface structure on Cu/Ni(111) and 1 × 1 atomic structure on Ge(110) are found to match the graphene lattice along the armchair direction. These specific atomic arrangements dictate the quasiepitaxial nature of graphene growth on both substrates despite their apparent differences in native lattice geometry.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5108699</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Atomic structure ; Copper ; Crystal structure ; Graphene ; Microscopy ; Nickel ; Scanning tunneling microscopy ; Single crystals ; Substrates ; Surface structure</subject><ispartof>Journal of applied physics, 2019-08, Vol.126 (7)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-5093bc45d413a4547ae0df60d0a636a737ff5597323e9830c6d9f7a49001ecd73</citedby><cites>FETCH-LOGICAL-c327t-5093bc45d413a4547ae0df60d0a636a737ff5597323e9830c6d9f7a49001ecd73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.5108699$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Zhu, Hailong</creatorcontrib><creatorcontrib>Cui, Fenwei</creatorcontrib><creatorcontrib>Zhang, Xuefu</creatorcontrib><creatorcontrib>Ma, Ni</creatorcontrib><creatorcontrib>Hu, Xudong</creatorcontrib><creatorcontrib>Di, Zengfeng</creatorcontrib><creatorcontrib>Xie, Xiaoming</creatorcontrib><creatorcontrib>Li, Ang</creatorcontrib><title>Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy</title><title>Journal of applied physics</title><description>The success in the synthesis of wafer-size single-crystal graphene enables a tremendous breakthrough in the development of graphene-based devices. Understanding the growth mechanism is essential for the design of suitable substrates to meet the demand of various applications. Here, we investigate the detailed growth process of the monolayer single-crystal graphene on Cu/Ni(111) and Ge(110) surfaces using scanning tunneling microscopy. The ( 3 × 3 ) R 30 ° surface structure on Cu/Ni(111) and 1 × 1 atomic structure on Ge(110) are found to match the graphene lattice along the armchair direction. These specific atomic arrangements dictate the quasiepitaxial nature of graphene growth on both substrates despite their apparent differences in native lattice geometry.</description><subject>Applied physics</subject><subject>Atomic structure</subject><subject>Copper</subject><subject>Crystal structure</subject><subject>Graphene</subject><subject>Microscopy</subject><subject>Nickel</subject><subject>Scanning tunneling microscopy</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Surface structure</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqdkEtLAzEUhYMoWKsL_0HAjRWmvZnMTJqlFK1C0YW6HtI86pRpZsxDGPzzprTg3tU9i--ee89B6JrAlEBFZ2RaEphXnJ-gURI8Y2UJp2gEkJNszhk_RxfebwEImVM-Qj9v0RkhNfbBRRmi0x53BvvGblqdSTf4IFq8caL_1FbjzuJFnL00t4SQCRZW4aVOGibYx3WyECHt-xBVoxVeD9hLYW3ywiFaq9u92jXSdV52_XCJzoxovb46zjH6eHx4Xzxlq9fl8-J-lUmas5CVwOlaFqUqCBVFWTChQZkKFIiKVoJRZkxZckZzqvmcgqwUN0wUPIXUUjE6RjcH3951X1H7UG-76Gw6Wec5K6AinEKiJgdq_5532tS9a3bCDTWBet9tTepjt4m9O7BeNkGEprP_g7879wfWvTL0F3aihyA</recordid><startdate>20190821</startdate><enddate>20190821</enddate><creator>Zhu, Hailong</creator><creator>Cui, Fenwei</creator><creator>Zhang, Xuefu</creator><creator>Ma, Ni</creator><creator>Hu, Xudong</creator><creator>Di, Zengfeng</creator><creator>Xie, Xiaoming</creator><creator>Li, Ang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190821</creationdate><title>Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy</title><author>Zhu, Hailong ; Cui, Fenwei ; Zhang, Xuefu ; Ma, Ni ; Hu, Xudong ; Di, Zengfeng ; Xie, Xiaoming ; Li, Ang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-5093bc45d413a4547ae0df60d0a636a737ff5597323e9830c6d9f7a49001ecd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Atomic structure</topic><topic>Copper</topic><topic>Crystal structure</topic><topic>Graphene</topic><topic>Microscopy</topic><topic>Nickel</topic><topic>Scanning tunneling microscopy</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Surface structure</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Hailong</creatorcontrib><creatorcontrib>Cui, Fenwei</creatorcontrib><creatorcontrib>Zhang, Xuefu</creatorcontrib><creatorcontrib>Ma, Ni</creatorcontrib><creatorcontrib>Hu, Xudong</creatorcontrib><creatorcontrib>Di, Zengfeng</creatorcontrib><creatorcontrib>Xie, Xiaoming</creatorcontrib><creatorcontrib>Li, Ang</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Hailong</au><au>Cui, Fenwei</au><au>Zhang, Xuefu</au><au>Ma, Ni</au><au>Hu, Xudong</au><au>Di, Zengfeng</au><au>Xie, Xiaoming</au><au>Li, Ang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy</atitle><jtitle>Journal of applied physics</jtitle><date>2019-08-21</date><risdate>2019</risdate><volume>126</volume><issue>7</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The success in the synthesis of wafer-size single-crystal graphene enables a tremendous breakthrough in the development of graphene-based devices. Understanding the growth mechanism is essential for the design of suitable substrates to meet the demand of various applications. Here, we investigate the detailed growth process of the monolayer single-crystal graphene on Cu/Ni(111) and Ge(110) surfaces using scanning tunneling microscopy. The ( 3 × 3 ) R 30 ° surface structure on Cu/Ni(111) and 1 × 1 atomic structure on Ge(110) are found to match the graphene lattice along the armchair direction. These specific atomic arrangements dictate the quasiepitaxial nature of graphene growth on both substrates despite their apparent differences in native lattice geometry.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5108699</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2019-08, Vol.126 (7)
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_5108699
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Atomic structure
Copper
Crystal structure
Graphene
Microscopy
Nickel
Scanning tunneling microscopy
Single crystals
Substrates
Surface structure
title Surface structures of single-crystal graphene on Cu/Ni(111) and Ge(110) substrates studied by scanning tunneling microscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A25%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20structures%20of%20single-crystal%20graphene%20on%20Cu/Ni(111)%20and%20Ge(110)%20substrates%20studied%20by%20scanning%20tunneling%20microscopy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Zhu,%20Hailong&rft.date=2019-08-21&rft.volume=126&rft.issue=7&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5108699&rft_dat=%3Cproquest_cross%3E2274061930%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2274061930&rft_id=info:pmid/&rfr_iscdi=true