Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

The emerging nonvolatile memory technology of redox-based resistive switching (RS) devices is not only a promising candidate for future high density memories but also for computational and neuromorphic applications. In neuromorphic as well as in memory applications, RS devices are configured in nano...

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Veröffentlicht in:	APL materials 2019-09, Vol.7 (9), p.091110-091110-7
Hauptverfasser:	Siemon, A., Ferch, S., Heittmann, A., Waser, R., Wouters, D. J., Menzel, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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