Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers were E3 (EC − 0.60 eV) and H1 (EV + 0.87 eV)...

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Veröffentlicht in:	Applied physics letters 2019-07, Vol.115 (1)
Hauptverfasser:	Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carbon Deep level transient spectroscopy Density Electrons Epitaxial growth Hole traps Hydrides Impurities Metalorganic chemical vapor deposition Quartz Vapor phase epitaxy
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